Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/84237
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dc.titleStress-induced leakage current in thin oxides under high-field impulse stressing
dc.contributor.authorTan, Y.N.
dc.contributor.authorChim, W.K.
dc.contributor.authorLim, P.S.
dc.date.accessioned2014-10-07T04:50:22Z
dc.date.available2014-10-07T04:50:22Z
dc.date.issued2001
dc.identifier.citationTan, Y.N.,Chim, W.K.,Lim, P.S. (2001). Stress-induced leakage current in thin oxides under high-field impulse stressing. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 228-233. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84237
dc.description.abstractStress-induced leakage current, or SILC, decreases when the time-between-pulses (Tbp) of an ac-pulse waveform is increased. The amount of SILC reduction generally decreases for the same increase in Tbp, with increasing stress voltage magnitude and stress pulse width. A model developed to describe the trap generation and relaxation processes occuring during transient high-field stress from unipolar and bipolar pulse waveforms is presented in this paper.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
dc.description.page228-233
dc.identifier.isiutNOT_IN_WOS
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