Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/84237
DC Field | Value | |
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dc.title | Stress-induced leakage current in thin oxides under high-field impulse stressing | |
dc.contributor.author | Tan, Y.N. | |
dc.contributor.author | Chim, W.K. | |
dc.contributor.author | Lim, P.S. | |
dc.date.accessioned | 2014-10-07T04:50:22Z | |
dc.date.available | 2014-10-07T04:50:22Z | |
dc.date.issued | 2001 | |
dc.identifier.citation | Tan, Y.N.,Chim, W.K.,Lim, P.S. (2001). Stress-induced leakage current in thin oxides under high-field impulse stressing. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 228-233. ScholarBank@NUS Repository. | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/84237 | |
dc.description.abstract | Stress-induced leakage current, or SILC, decreases when the time-between-pulses (Tbp) of an ac-pulse waveform is increased. The amount of SILC reduction generally decreases for the same increase in Tbp, with increasing stress voltage magnitude and stress pulse width. A model developed to describe the trap generation and relaxation processes occuring during transient high-field stress from unipolar and bipolar pulse waveforms is presented in this paper. | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.sourcetitle | Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA | |
dc.description.page | 228-233 | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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