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Please use this identifier to cite or link to this item: https://doi.org/10.1109/ESSDER.2005.1546702
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dc.titleSTI-induced damage and hot-carrier reliability in the narrow width short channel NMOSFET fabricated using global strained-Si technology
dc.contributor.authorPhua, W.H.T.
dc.contributor.authorAng, D.S.
dc.contributor.authorLing, C.H.
dc.contributor.authorChui, K.J.
dc.date.accessioned2014-10-07T04:50:15Z
dc.date.available2014-10-07T04:50:15Z
dc.date.issued2005
dc.identifier.citationPhua, W.H.T., Ang, D.S., Ling, C.H., Chui, K.J. (2005). STI-induced damage and hot-carrier reliability in the narrow width short channel NMOSFET fabricated using global strained-Si technology. Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference 2005 : 533-536. ScholarBank@NUS Repository. https://doi.org/10.1109/ESSDER.2005.1546702
dc.identifier.isbn0780392035
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84226
dc.description.abstractThe width dependence of threshold voltage (Vt) in the strained-Si NMOSFET relative to that of the control bulk Si device is examined. The contrasting behavior of Vt, for decreasing channel width (W drawn) at a given channel length (Ldrawn), could be ascribed to the increased concentration of the channel dopant at the regions near the STI (shallow trench isolation)/gate edge of the strained device. Dopant enhancement is attributed to the abundance of interstitial defect sites located in both the strained-Si and the SiGe layer, due to the lattice strain arising from the STI process. Hot-carrier degradation is found to be marginally higher in the narrow-width strained device. © 2005 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/ESSDER.2005.1546702
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/ESSDER.2005.1546702
dc.description.sourcetitleProceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference
dc.description.volume2005
dc.description.page533-536
dc.identifier.isiut000236176200125
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