Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/84197
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dc.titleSingle silicide comprising nickel-dysprosium alloy for integration in p- and n-FinFETs with independent control of contact resistance by aluminum implant
dc.contributor.authorSinha, M.
dc.contributor.authorLee, R.T.P.
dc.contributor.authorDevi, S.N.
dc.contributor.authorLo, G.-Q.
dc.contributor.authorEng, F.C.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:49:55Z
dc.date.available2014-10-07T04:49:55Z
dc.date.issued2009
dc.identifier.citationSinha, M.,Lee, R.T.P.,Devi, S.N.,Lo, G.-Q.,Eng, F.C.,Yeo, Y.-C. (2009). Single silicide comprising nickel-dysprosium alloy for integration in p- and n-FinFETs with independent control of contact resistance by aluminum implant. Digest of Technical Papers - Symposium on VLSI Technology : 106-107. ScholarBank@NUS Repository.
dc.identifier.isbn9784863480094
dc.identifier.issn07431562
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84197
dc.description.abstractWe report the first demonstration of a single silicide contact technology employing a low workfunction metal alloy [Nickel (Ni) - Dysprosium (Dy)] silicide, while achieving low contact resistance RC, for both n- and p- FETs. A key enabler is the Aluminum ion implant technology for independent and effective reduction of RC for the strained p-FinFETs with SiGe S/D. For strained p-FinFETs, the Ni(Dy)SiGe contact with Al implant gives ∼20 % IDSAT enhancement over the conventional NiSiGe contact without Al implant. For strained n-FinFETs, Ni(Dy)Si:C S/D contact, simultaneously formed using the same process conditions, gives an I DSAT enhancement of ∼49 % over n-FinFETs with NiSi:C contacts.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleDigest of Technical Papers - Symposium on VLSI Technology
dc.description.page106-107
dc.description.codenDTPTE
dc.identifier.isiutNOT_IN_WOS
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