Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/84197
DC Field | Value | |
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dc.title | Single silicide comprising nickel-dysprosium alloy for integration in p- and n-FinFETs with independent control of contact resistance by aluminum implant | |
dc.contributor.author | Sinha, M. | |
dc.contributor.author | Lee, R.T.P. | |
dc.contributor.author | Devi, S.N. | |
dc.contributor.author | Lo, G.-Q. | |
dc.contributor.author | Eng, F.C. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:49:55Z | |
dc.date.available | 2014-10-07T04:49:55Z | |
dc.date.issued | 2009 | |
dc.identifier.citation | Sinha, M.,Lee, R.T.P.,Devi, S.N.,Lo, G.-Q.,Eng, F.C.,Yeo, Y.-C. (2009). Single silicide comprising nickel-dysprosium alloy for integration in p- and n-FinFETs with independent control of contact resistance by aluminum implant. Digest of Technical Papers - Symposium on VLSI Technology : 106-107. ScholarBank@NUS Repository. | |
dc.identifier.isbn | 9784863480094 | |
dc.identifier.issn | 07431562 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/84197 | |
dc.description.abstract | We report the first demonstration of a single silicide contact technology employing a low workfunction metal alloy [Nickel (Ni) - Dysprosium (Dy)] silicide, while achieving low contact resistance RC, for both n- and p- FETs. A key enabler is the Aluminum ion implant technology for independent and effective reduction of RC for the strained p-FinFETs with SiGe S/D. For strained p-FinFETs, the Ni(Dy)SiGe contact with Al implant gives ∼20 % IDSAT enhancement over the conventional NiSiGe contact without Al implant. For strained n-FinFETs, Ni(Dy)Si:C S/D contact, simultaneously formed using the same process conditions, gives an I DSAT enhancement of ∼49 % over n-FinFETs with NiSi:C contacts. | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.sourcetitle | Digest of Technical Papers - Symposium on VLSI Technology | |
dc.description.page | 106-107 | |
dc.description.coden | DTPTE | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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