Please use this identifier to cite or link to this item: https://doi.org/10.1002/pssc.200461393
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dc.titleSchottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon
dc.contributor.authorPark, S.-J.
dc.contributor.authorLee, H.-B.
dc.contributor.authorShan, W.L.
dc.contributor.authorChua, S.-J.
dc.contributor.authorLee, J.-H.
dc.contributor.authorHahm, S.-H.
dc.date.accessioned2014-10-07T04:49:27Z
dc.date.available2014-10-07T04:49:27Z
dc.date.issued2005
dc.identifier.citationPark, S.-J., Lee, H.-B., Shan, W.L., Chua, S.-J., Lee, J.-H., Hahm, S.-H. (2005). Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon. Physica Status Solidi C: Conferences 2 (7) : 2559-2563. ScholarBank@NUS Repository. https://doi.org/10.1002/pssc.200461393
dc.identifier.issn16101634
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84157
dc.description.abstractThe planar Schottky diodes were fabricated, characterized and modelled to study the electrical characteristics of cracked GaN epitaxial layer on (111) silicon substrate. We deposited Ti/Al/Ni/Au as the ohmic metal and Pt as the Schottky metal. The ohmic contact resistivity was 5.51×10-5 Ω·cm2 after annealing in N2 ambient at 700°C for 30 s. The fabricated Schottky diode exhibited the barrier height of 0.7 eV and the ideal factor was 2.4. We got the cutoff wavelength at 360 nm, peak responsivity of 0.097 A/W at 300nm, and UV/visible rejection ratio was about 104. The SPICE simulation with the circuit model, which was composed with one Pt/GaN diode and three parasitic diodes, showed good agreement with the experiment. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/pssc.200461393
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1002/pssc.200461393
dc.description.sourcetitlePhysica Status Solidi C: Conferences
dc.description.volume2
dc.description.issue7
dc.description.page2559-2563
dc.identifier.isiut000230421400128
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