Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/84134
DC FieldValue
dc.titleReliability improvement to copper damascene structures using buried capping layer
dc.contributor.authorYiang, K.Y.
dc.contributor.authorYoo, W.J.
dc.contributor.authorKrishnamoorthy, A.
dc.date.accessioned2014-10-07T04:49:12Z
dc.date.available2014-10-07T04:49:12Z
dc.date.issued2003
dc.identifier.citationYiang, K.Y.,Yoo, W.J.,Krishnamoorthy, A. (2003). Reliability improvement to copper damascene structures using buried capping layer. Advanced Metallization Conference (AMC) : 271-275. ScholarBank@NUS Repository.
dc.identifier.issn15401766
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84134
dc.description.abstractA buried capping layer (BCL) of undoped silicate glass (USG) was incorporated into Cu damascene structures to improve electrical reliability. With carbon-doped silicon oxide (SiOC) as intermetal dielectric, the results showed that a BCL of 100 Å thickness successfully improved breakdown strength two-fold and reduced leakage by 1 order of magnitude to within the specification of 10 -8 A/cm 2 (at 25°C). The incorporated BCL of 100 Å thickness increased the overall parasitic capacitance by merely 2%, compared to conventional structures without BCL. The BCL is therefore a promising candidate in improving the overall electrical reliability of interconnects. © 2004 Materials Research Society.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleAdvanced Metallization Conference (AMC)
dc.description.page271-275
dc.description.codenMRSPD
dc.identifier.isiutNOT_IN_WOS
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