Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.egypro.2012.07.001
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dc.titleProgress in the development of all-back-contacted silicon solar cells
dc.contributor.authorZin, N.
dc.contributor.authorBlakers, A.
dc.contributor.authorFranklin, E.
dc.contributor.authorKho, T.
dc.contributor.authorMcintosh, K.
dc.contributor.authorWong, J.
dc.contributor.authorMueller, T.
dc.contributor.authorAberle, A.G.
dc.contributor.authorYang, Y.
dc.contributor.authorZhang, X.
dc.contributor.authorFeng, Z.
dc.contributor.authorHuang, Q.
dc.date.accessioned2014-10-07T04:48:58Z
dc.date.available2014-10-07T04:48:58Z
dc.date.issued2012
dc.identifier.citationZin, N., Blakers, A., Franklin, E., Kho, T., Mcintosh, K., Wong, J., Mueller, T., Aberle, A.G., Yang, Y., Zhang, X., Feng, Z., Huang, Q. (2012). Progress in the development of all-back-contacted silicon solar cells. Energy Procedia 25 : 1-9. ScholarBank@NUS Repository. https://doi.org/10.1016/j.egypro.2012.07.001
dc.identifier.issn18766102
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84114
dc.description.abstractN-type all-back-contact (ABC) silicon solar cells incorporating a simple oxide-nitride passivation scheme are presently being developed at the Australian National University. Having already achieved promising efficiencies with planar ABC cells [1], this work analyses the cell performance after integrating a surface texturing step into the process flow. Although the textured cells have significantly lower front surface reflection, the measured short-circuit current density is actually lower than that of the planar cells. Photoconductance decay data indicate the presence of high carrier recombination at the textured surface of the ABC cells, which are deposited with a stack of thermal oxide and LPCVD nitride. Further examination confirmed that high carrier recombination is due to stress induced by the LPCVD nitride on the peaks and valleys of the textured surface. Use of PECVD nitride instead of LPCVD nitride as an antireflection layer avoids the degraded carrier lifetime caused by the textured surface. Therefore, PECVD nitride should be a good substitute for constructing the oxide-nitride stacks of our future ABC cells. © 2012 Published by Elsevier Ltd.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.egypro.2012.07.001
dc.sourceScopus
dc.subjectAll-back-contacted silicon solar cells
dc.subjectLPCVD
dc.subjectPCD
dc.subjectPECVD
dc.subjectTexturing
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.egypro.2012.07.001
dc.description.sourcetitleEnergy Procedia
dc.description.volume25
dc.description.page1-9
dc.identifier.isiut000310699400001
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