Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/84095
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dc.titlePhysical analysis of Ti-migration in 33 Å gate oxide breakdown
dc.contributor.authorPey, K.L.
dc.contributor.authorTung, C.H.
dc.contributor.authorLin, W.H.
dc.contributor.authorRadhakrishnan, M.K.
dc.date.accessioned2014-10-07T04:48:44Z
dc.date.available2014-10-07T04:48:44Z
dc.date.issued2002
dc.identifier.citationPey, K.L.,Tung, C.H.,Lin, W.H.,Radhakrishnan, M.K. (2002). Physical analysis of Ti-migration in 33 Å gate oxide breakdown. Annual Proceedings - Reliability Physics (Symposium) : 210-215. ScholarBank@NUS Repository.
dc.identifier.issn00999512
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84095
dc.description.abstractAbnormal titanium migration in the poly-Si gate and transistor channel near the source/drain extension was discovered in Ti-silicided 0.18 × 0.40 μm2 MOSFETs after constant voltage stress of 5.1V at 100 °C during gate dielectric breakdown study. Coupled with a soft breakdown event, lateral titanium migration from the source/drain active Si regions and titanium downward protrusion within the poly-Si gate take place. This leads to a Ti-silicide migration induced enhanced junction leakage and a degraded transistor performance. Even though the transistor still functions electrically, this new degradation phenomenon may lead to early failure in the device, posing a reliability concern. We postulate that the abnormal titanium migration was triggered by an enhanced localized current density induced through the breakdown spot in the gate dielectric, leading to an extraordinary titanium migration due to the presence of the high magnitude of electrical driving force [1]. We call this new mechanism dielectric breakdown induced-silicide migration (DBIM). A similar phenomenon has not been observed so far in cobalt-silicided 0.15μm transistor fabricated with 25Å gate oxide.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentINSTITUTE OF MICROELECTRONICS
dc.description.sourcetitleAnnual Proceedings - Reliability Physics (Symposium)
dc.description.page210-215
dc.description.codenARLPB
dc.identifier.isiutNOT_IN_WOS
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