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dc.titlePhotoluminescence from Silicon Nanocrystals Formed by Pulsed-Laser Deposition
dc.contributor.authorChen, X.Y.
dc.contributor.authorLu, Y.F.
dc.contributor.authorWu, Y.H.
dc.contributor.authorCho, B.J.
dc.contributor.authorSong, W.D.
dc.contributor.authorHu, H.
dc.identifier.citationChen, X.Y.,Lu, Y.F.,Wu, Y.H.,Cho, B.J.,Song, W.D.,Hu, H. (2003). Photoluminescence from Silicon Nanocrystals Formed by Pulsed-Laser Deposition. Materials Research Society Symposium - Proceedings 770 : 145-150. ScholarBank@NUS Repository.
dc.description.abstractSi nanocrystals (NCs) consisting of small crystals from 1 to 20 nm were formed by pulsed-laser deposition (PLD) in inert Ar gas and reactive O 2 gas. The oxygen content of the Si NCs increases with increasing O 2 ambient pressure and nearly SiO 2 stoichiometry is obtained when O 2 pressure is higher than 100 mTorr. The optical absorption of the Si NCs shows an indirect band transition. Broad PL spectra are observed from Si NCs. The peak position and intensity of the PL band at 1.8-2.1 eV are dependent on excitation laser intensity, while intensity changes and blue shifts are observed after oxidation and annealing. The PL band at 2.55 eV displays vibronic structures with periodic spacing of 97 ± 9 meV, while no peak shift is found before and after oxidation and annealing. The as-deposited Si NCs show a polycrystal structure and crystallinity improves after annealing. Combined with the PL of Si NCs obtained by crumbling electrochemical-etched porous Si layer, the results give strong evidence that the PL band at 1.8-2.1 eV is due to the quantum confinement effect (QCE) in Si NC core while the PL band at 2.55 eV is related to the localized surface states at SiO x/Si interface.
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentDATA STORAGE INSTITUTE
dc.description.sourcetitleMaterials Research Society Symposium - Proceedings
Appears in Collections:Staff Publications

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