Performance comparison of III-V MOSFETs with source filter for electron energy

Abstract

We evaluated the performances of two high-energy-electrons filtering MOSFET designs, the superlattice source-extension (SL) MOSFET and the p +/n+ source-junction (p+n+ source) MOSFET, using the sp3d5s full-band tight-binding model, coupled with a non-equilibrium Green's function quantum transport simulator in the ballistic regime. III-V semicoductor heterojunctions made up of GaAs and In53Ga47As are investigated and the optimizing parameters such as the length of the barrier and well regions for the SL-MOSFETs and the doping concentrations and the length of n+ region for the p +n+ source MOSFETs are varied to understand their effects on the device performance parameters. More detailed interactions between electrons are considered in the present full-band simulations. Our optimized SL-MOSFET and p+n+ source MOSFET achieve ION = 0.81 and 0.60 mA/μm, SS = 20.9 and 23.1mV/dec@VDS=0.6V, respectively. © 2012 IEEE.