Please use this identifier to cite or link to this item: https://doi.org/10.1109/VTSA.2008.4530781
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dc.titleP-channel I-MOS transistor featuring silicon nano-wire with multiple-gates, strained Si1-yCy I-region, in situ doped Si 1-yCy source, and sub-5 mV/decade subthreshold swing
dc.contributor.authorToh, E.-H.
dc.contributor.authorWang, G.H.
dc.contributor.authorWeeks, D.
dc.contributor.authorZhu, M.
dc.contributor.authorBauer, M.
dc.contributor.authorSpear, J.
dc.contributor.authorChan, L.
dc.contributor.authorThomas, S.G.
dc.contributor.authorSamudra, G.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:48:26Z
dc.date.available2014-10-07T04:48:26Z
dc.date.issued2008
dc.identifier.citationToh, E.-H., Wang, G.H., Weeks, D., Zhu, M., Bauer, M., Spear, J., Chan, L., Thomas, S.G., Samudra, G., Yeo, Y.-C. (2008). P-channel I-MOS transistor featuring silicon nano-wire with multiple-gates, strained Si1-yCy I-region, in situ doped Si 1-yCy source, and sub-5 mV/decade subthreshold swing. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 24-25. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2008.4530781
dc.identifier.isbn9781424416158
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84069
dc.description.abstractWe realized Impact Ionization Nanowire Multiple-gate Field-Effect Transistors (I-MuGFETs or I-FinFETs) having a multiplegate/nanowire-channel architecture to exploit the superior gate-to-channel coupling for reduced breakdown voltage VBD and enhanced device performance. The first p-channel Impact Ionization MOS transistor (I-MOS) having in situ doped source was also demonstrated. An in situ phosphorus-doped Si source with improved dopant activation and very abrupt junction profile reduces VBD and enhances the on-state current Ion. A further improvement was also made by incorporating strained Si1-yCy, impact-ionization region (I-region) and in situ doped Si1-yCy source, leading to further reduction in VBD and enhancement in I on. This is due to strain-induced reduction of the impact-ionization threshold energy Eth. In addition, excellent subthreshold swing of below 5 mV/decade at room temperature was achieved for all devices. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/VTSA.2008.4530781
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/VTSA.2008.4530781
dc.description.sourcetitleInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
dc.description.page24-25
dc.identifier.isiut000256564900010
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