Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.egypro.2013.07.258
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dc.titleNumerical analysis of p+ emitters passivated by a PECVD AlO x/SiNx stack
dc.contributor.authorMa, F.-J.
dc.contributor.authorDuttagupta, S.
dc.contributor.authorPeters, M.
dc.contributor.authorSamudra, G.S.
dc.contributor.authorAberle, A.G.
dc.contributor.authorHoex, B.
dc.date.accessioned2014-10-07T04:47:57Z
dc.date.available2014-10-07T04:47:57Z
dc.date.issued2013
dc.identifier.citationMa, F.-J., Duttagupta, S., Peters, M., Samudra, G.S., Aberle, A.G., Hoex, B. (2013). Numerical analysis of p+ emitters passivated by a PECVD AlO x/SiNx stack. Energy Procedia 38 : 124-130. ScholarBank@NUS Repository. https://doi.org/10.1016/j.egypro.2013.07.258
dc.identifier.issn18766102
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84028
dc.description.abstractEvaluation of the level of surface passivation at highly doped crystalline silicon (c-Si) surfaces is not trivial, particularly when the surfaces are textured. In this work we present an advanced numerical analysis that can be used to evaluate the level of surface passivation at both planar and textured samples. First, using Sentaurus TCAD, we compare two widely used extraction methods of the emitter saturation current density J0e, the general definition and Kane & Swanson's method. Experimentally determined doping profiles on planar wafers are used to calibrate two-dimensional process simulations. Process simulations are subsequently used to calculate p + emitter doping profiles for textured wafers, which are required to simulate J0e. Additionally, while matching simulated and experimentally measured J0e values, we find that a high density of negative fixed charge in a plasma enhanced chemical vapour deposited AlO x/SiNx stack has a significant impact on surface recombination at the surface. Furthermore, we compare J0e values from textured and planar wafers and confirm that the difference from the expected geometrical factor can be attributed to surface recombination. Finally, by considering surface charges, we find that the electron surface recombination velocity parameter Sn0 is around 1×104 cm/s for all p+ emitters studied in this work. © 2013 The Authors.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.egypro.2013.07.258
dc.sourceScopus
dc.subjectAlox/SiNx stacks
dc.subjectCrystalline silicon
dc.subjectEmitter saturation current density
dc.subjectPyramidal texture
dc.subjectSurface passivation
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentSOLAR ENERGY RESEARCH INST OF S'PORE
dc.description.doi10.1016/j.egypro.2013.07.258
dc.description.sourcetitleEnergy Procedia
dc.description.volume38
dc.description.page124-130
dc.identifier.isiut000345357200017
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