1. ScholarBank@NUS
  2. 1. Staff
  3. Staff Publications
Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2007.4418869
DC FieldValue
dc.titleNovel ZrO2/Si3N4 dual charge storage layer to form step-up potential wells for highly reliable multi-level cell application
dc.contributor.authorZhang, G.
dc.contributor.authorWan, S.H.
dc.contributor.authorBobade, S.M.
dc.contributor.authorLee, S.-H.
dc.contributor.authorCho, B.-J.
dc.contributor.authorWon, J.Y.
dc.date.accessioned2014-10-07T04:47:56Z
dc.date.available2014-10-07T04:47:56Z
dc.date.issued2007
dc.identifier.citationZhang, G., Wan, S.H., Bobade, S.M., Lee, S.-H., Cho, B.-J., Won, J.Y. (2007). Novel ZrO2/Si3N4 dual charge storage layer to form step-up potential wells for highly reliable multi-level cell application. Technical Digest - International Electron Devices Meeting, IEDM : 83-86. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2007.4418869
dc.identifier.issn01631918
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84026
dc.description.abstractA novel ZrO2/Si3N4 dual charge storage layer (DCSL) has been proposed for highly reliable multi-level cell (MLC) application. Separated charge storage and step-up potential well have been resulted from the ZrO2/Si3N4 DCSL. Threshold voltage (Vth) levels are controlled by the charge storage capacity of each CSL, instead of the amount of charge injection, making a superior multi-level Vth control possible. Negligible Vth offsets (
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/IEDM.2007.4418869
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/IEDM.2007.4418869
dc.description.sourcetitleTechnical Digest - International Electron Devices Meeting, IEDM
dc.description.page83-86
dc.description.codenTDIMD
dc.identifier.isiut000259347800017
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.