1. ScholarBank@NUS
  2. 1. Staff
  3. Staff Publications
Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSI-TSA.2013.6545609
DC FieldValue
dc.titleNovel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for InGaAs n-MOSFETs
dc.contributor.authorKong, E.
dc.contributor.authorGong, X.
dc.contributor.authorGuo, P.
dc.contributor.authorLiu, B.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:47:54Z
dc.date.available2014-10-07T04:47:54Z
dc.date.issued2013
dc.identifier.citationKong, E.,Gong, X.,Guo, P.,Liu, B.,Yeo, Y.-C. (2013). Novel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for InGaAs n-MOSFETs. 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VLSI-TSA.2013.6545609" target="_blank">https://doi.org/10.1109/VLSI-TSA.2013.6545609</a>
dc.identifier.isbn9781467330817
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84023
dc.description.abstractA novel technique for doping the source/drain or source/drain extension regions of InGaAs MOSFETs was developed based on silane treatment and laser anneal. This doping technique has the potential to provide conformal, ultra-shallow, and very abrupt n++ junctions while being free from implant damage, and is first demonstrated in planar InGaAs MOSFETs. © 2013 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/VLSI-TSA.2013.6545609
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/VLSI-TSA.2013.6545609
dc.description.sourcetitle2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
dc.description.page-
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.