Near ballistic sub-7 nm Junctionless FET featuring 1 nm extremely-thin channel and raised S/D structure

Abstract

In this work, we report the realization of In0.53Ga 0.47As Junctionless FET (JLFET) with the shortest reported channel length Lch (6 nm) for any III-V transistors. The JLFET features a 1 nm-thick extremely-thin channel sandwiched between a 1 nm-thick InP cap and the InP substrate, and a heavily doped raised S/D structure. Peak transconductance Gm. Peak of 1480 μS/μm at VDS = 0.7 V with an EOT of 2.5 nm and an ultra-low S/D resistance RSD of 165 Ω.μm were achieved. In addition, the ballistic behavior of sub-7 nm III-V transistors was experimentally investigated by using a novel extraction approach for the first time. The In0.53Ga0.47As JLFET with LCH of 6 nm was demonstrated to have a mean free path λ of 27.2 nm and nearly ballistic transport with ballistic efficiency B of 0.82. © 2013 IEEE.