Please use this identifier to cite or link to this item: https://doi.org/10.1109/IMW.2010.5488400
DC FieldValue
dc.titleMulti-level lateral phase change memory based on N-doped Sb 70Te30 super-lattice like structure
dc.contributor.authorYang, H.X.
dc.contributor.authorShi, L.P.
dc.contributor.authorLee, H.K.
dc.contributor.authorZhao, R.
dc.contributor.authorLi, M.H.
dc.contributor.authorLi, J.M.
dc.contributor.authorLim, K.G.
dc.contributor.authorChong, T.C.
dc.date.accessioned2014-10-07T04:47:30Z
dc.date.available2014-10-07T04:47:30Z
dc.date.issued2010
dc.identifier.citationYang, H.X.,Shi, L.P.,Lee, H.K.,Zhao, R.,Li, M.H.,Li, J.M.,Lim, K.G.,Chong, T.C. (2010). Multi-level lateral phase change memory based on N-doped Sb 70Te30 super-lattice like structure. 2010 IEEE International Memory Workshop, IMW 2010 : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IMW.2010.5488400" target="_blank">https://doi.org/10.1109/IMW.2010.5488400</a>
dc.identifier.isbn9781424467211
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83988
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/IMW.2010.5488400
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/IMW.2010.5488400
dc.description.sourcetitle2010 IEEE International Memory Workshop, IMW 2010
dc.description.page-
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.