Please use this identifier to cite or link to this item: https://doi.org/10.1109/TMAG.2011.2158634
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dc.titleMRAM device incorporating single-layer switching via rashba-induced spin torque
dc.contributor.authorGuo, J.
dc.contributor.authorTan, S.G.
dc.contributor.authorJalil, M.B.A.
dc.contributor.authorEason, K.
dc.contributor.authorLua, S.Y.H.
dc.contributor.authorRachid, S.
dc.contributor.authorMeng, H.
dc.date.accessioned2014-10-07T04:47:25Z
dc.date.available2014-10-07T04:47:25Z
dc.date.issued2011-10
dc.identifier.citationGuo, J., Tan, S.G., Jalil, M.B.A., Eason, K., Lua, S.Y.H., Rachid, S., Meng, H. (2011-10). MRAM device incorporating single-layer switching via rashba-induced spin torque. IEEE Transactions on Magnetics 47 (10) : 3868-3871. ScholarBank@NUS Repository. https://doi.org/10.1109/TMAG.2011.2158634
dc.identifier.issn00189464
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83980
dc.description.abstractWe designed and modeled a nonvolatile memory device that utilizes the Rashba spin-orbit coupling (SOC) to write data onto a free ferromagnetic (FM) layer and uses the tunneling magnetoresistive (TMR) effect for data read-back. The magnetic RAM (MRAM) device consists of a free (switchable) FM multilayer stack, in which a large internal electric field is induced at the interfaces between the oxide and the FM layer. In the FM layer, data writing by magnetization switching occurs via the Rashba-induced spin torque, while the data reading process in the system could be fulfilled via the current-perpendicular-to-plane TMR response. A general equation of motion for the local moments has been obtained by formally deriving the SU(2) spin-orbit gauge field arising due to SOC and the critical current density is estimated to be 1.2× 108 A/cm2. Micromagnetic simulations were performed to demonstrate the Rashba-induced switching mechanism. By choosing or fabricating alloys with a lower magnetocrystalline anisotropy and enhancing the Rashba coupling strength via surface or interfacial engineering, the critical current may be further reduced to well below 107 A/cm2, a level that may enable the practical realization of a single-layer Rashba-induced magnetization switching memory. © 2011 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TMAG.2011.2158634
dc.sourceScopus
dc.subjectMagnetic RAM (MRAM)
dc.subjectRashba spin-orbit interaction
dc.subjectspin transfer torque (STT)
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentNUS NANOSCIENCE & NANOTECH INITIATIVE
dc.description.doi10.1109/TMAG.2011.2158634
dc.description.sourcetitleIEEE Transactions on Magnetics
dc.description.volume47
dc.description.issue10
dc.description.page3868-3871
dc.description.codenIEMGA
dc.identifier.isiut000296418200398
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