Please use this identifier to cite or link to this item:
https://doi.org/10.1109/TMAG.2011.2158634
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dc.title | MRAM device incorporating single-layer switching via rashba-induced spin torque | |
dc.contributor.author | Guo, J. | |
dc.contributor.author | Tan, S.G. | |
dc.contributor.author | Jalil, M.B.A. | |
dc.contributor.author | Eason, K. | |
dc.contributor.author | Lua, S.Y.H. | |
dc.contributor.author | Rachid, S. | |
dc.contributor.author | Meng, H. | |
dc.date.accessioned | 2014-10-07T04:47:25Z | |
dc.date.available | 2014-10-07T04:47:25Z | |
dc.date.issued | 2011-10 | |
dc.identifier.citation | Guo, J., Tan, S.G., Jalil, M.B.A., Eason, K., Lua, S.Y.H., Rachid, S., Meng, H. (2011-10). MRAM device incorporating single-layer switching via rashba-induced spin torque. IEEE Transactions on Magnetics 47 (10) : 3868-3871. ScholarBank@NUS Repository. https://doi.org/10.1109/TMAG.2011.2158634 | |
dc.identifier.issn | 00189464 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83980 | |
dc.description.abstract | We designed and modeled a nonvolatile memory device that utilizes the Rashba spin-orbit coupling (SOC) to write data onto a free ferromagnetic (FM) layer and uses the tunneling magnetoresistive (TMR) effect for data read-back. The magnetic RAM (MRAM) device consists of a free (switchable) FM multilayer stack, in which a large internal electric field is induced at the interfaces between the oxide and the FM layer. In the FM layer, data writing by magnetization switching occurs via the Rashba-induced spin torque, while the data reading process in the system could be fulfilled via the current-perpendicular-to-plane TMR response. A general equation of motion for the local moments has been obtained by formally deriving the SU(2) spin-orbit gauge field arising due to SOC and the critical current density is estimated to be 1.2× 108 A/cm2. Micromagnetic simulations were performed to demonstrate the Rashba-induced switching mechanism. By choosing or fabricating alloys with a lower magnetocrystalline anisotropy and enhancing the Rashba coupling strength via surface or interfacial engineering, the critical current may be further reduced to well below 107 A/cm2, a level that may enable the practical realization of a single-layer Rashba-induced magnetization switching memory. © 2011 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TMAG.2011.2158634 | |
dc.source | Scopus | |
dc.subject | Magnetic RAM (MRAM) | |
dc.subject | Rashba spin-orbit interaction | |
dc.subject | spin transfer torque (STT) | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.contributor.department | NUS NANOSCIENCE & NANOTECH INITIATIVE | |
dc.description.doi | 10.1109/TMAG.2011.2158634 | |
dc.description.sourcetitle | IEEE Transactions on Magnetics | |
dc.description.volume | 47 | |
dc.description.issue | 10 | |
dc.description.page | 3868-3871 | |
dc.description.coden | IEMGA | |
dc.identifier.isiut | 000296418200398 | |
Appears in Collections: | Staff Publications |
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