Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/83968
DC Field | Value | |
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dc.title | Modeling RF MOSFETs after electrical stress using low-noise microstrip line layout | |
dc.contributor.author | Kao, H.L. | |
dc.contributor.author | Chin, A. | |
dc.contributor.author | Lai, J.M. | |
dc.contributor.author | Lee, C.F. | |
dc.contributor.author | Chiang, K.C. | |
dc.contributor.author | McAlister, S.P. | |
dc.date.accessioned | 2014-10-07T04:47:16Z | |
dc.date.available | 2014-10-07T04:47:16Z | |
dc.date.issued | 2005 | |
dc.identifier.citation | Kao, H.L.,Chin, A.,Lai, J.M.,Lee, C.F.,Chiang, K.C.,McAlister, S.P. (2005). Modeling RF MOSFETs after electrical stress using low-noise microstrip line layout. Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium : 157-160. ScholarBank@NUS Repository. | |
dc.identifier.issn | 15292517 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83968 | |
dc.description.abstract | A novel microstrip line layout is developed to direct measure the min. noise figure (NF min) accurately instead of the complicated de-embedding procedure in conventional CPW line. Very low NF min of 1.05 dB at 10 GHz is directly measured in 16 gate fingers 0.18μm MOSFETs without any de-embedding. Based on the accurate NF min measurement, we have developed the self-consistent DC, S-parameters and NF min model to predict device characteristics after the continuous stress with good accuracy. © 2005 IEEE. | |
dc.source | Scopus | |
dc.subject | Lifetime | |
dc.subject | Model | |
dc.subject | NF min | |
dc.subject | RF noise | |
dc.subject | Stress | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.sourcetitle | Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium | |
dc.description.page | 157-160 | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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