Please use this identifier to cite or link to this item: https://doi.org/10.1109/MWSYM.2005.1516584
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dc.titleLow noise and high gain RF MOSFETs on plastic substrates
dc.contributor.authorKao, H.L.
dc.contributor.authorChin, A.
dc.contributor.authorHuang, C.C.
dc.contributor.authorHung, B.F.
dc.contributor.authorChiang, K.C.
dc.contributor.authorLai, Z.M.
dc.contributor.authorMcAlister, S.P.
dc.contributor.authorChi, C.C.
dc.date.accessioned2014-10-07T04:46:33Z
dc.date.available2014-10-07T04:46:33Z
dc.date.issued2005
dc.identifier.citationKao, H.L., Chin, A., Huang, C.C., Hung, B.F., Chiang, K.C., Lai, Z.M., McAlister, S.P., Chi, C.C. (2005). Low noise and high gain RF MOSFETs on plastic substrates. IEEE MTT-S International Microwave Symposium Digest 2005 : 295-298. ScholarBank@NUS Repository. https://doi.org/10.1109/MWSYM.2005.1516584
dc.identifier.isbn0780388461
dc.identifier.issn0149645X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83904
dc.description.abstractA low minimum noise figure (NF min) of 1.2 dB and high associated gain of 12.8 dB at 10 GHz, were measured for 0.18 μm RF MOSFETs on plastic, made by substrate thinning (∼30 μm), transfer and bonding. The performance can be further improved to 0.96 dB NF min and 14.1 dB associated gain at 10 GHz, under applied tensile strain, using flexible Si on plastic. A 3.5 nH inductor on plastic showed a 55% higher Q-factor with a wider frequency range, compared with that on a Si substrate. © 2005 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/MWSYM.2005.1516584
dc.sourceScopus
dc.subjectAssociated gain
dc.subjectMOSFET
dc.subjectPlastic
dc.subjectRF Noise
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/MWSYM.2005.1516584
dc.description.sourcetitleIEEE MTT-S International Microwave Symposium Digest
dc.description.volume2005
dc.description.page295-298
dc.description.codenIMIDD
dc.identifier.isiut000234561200068
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