Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4860295
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dc.titleLow energy C+ ion embedment induced structural disorder in L10 FePt
dc.contributor.authorKundu, S.
dc.contributor.authorRismani-Yazdi, E.
dc.contributor.authorSaifullah, M.S.M.
dc.contributor.authorRu Tan, H.
dc.contributor.authorYang, H.
dc.contributor.authorBhatia, C.S.
dc.date.accessioned2014-10-07T04:46:32Z
dc.date.available2014-10-07T04:46:32Z
dc.date.issued2014-01-07
dc.identifier.citationKundu, S., Rismani-Yazdi, E., Saifullah, M.S.M., Ru Tan, H., Yang, H., Bhatia, C.S. (2014-01-07). Low energy C+ ion embedment induced structural disorder in L10 FePt. Journal of Applied Physics 115 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4860295
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83903
dc.description.abstractShallow embedding of C+ ions (2 nm by the C+ ions into the FePt film. The media's crystallography with respect to the size and direction of the incoming ions has emerged to be accountable for the deeper distribution of the C+ ions and the associated widespread cascade damages within the magnetic layer. The consequences of low energy C+ ions embedding to attain high storage densities using high anisotropy L10 FePt media are discussed. © 2014 AIP Publishing LLC.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4860295
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.4860295
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume115
dc.description.issue1
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000329456300038
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