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Please use this identifier to cite or link to this item: https://doi.org/10.1109/VTSA.2009.5159330
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dc.titleInversion-type surface channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts
dc.contributor.authorChin, H.-C.
dc.contributor.authorLiu, X.
dc.contributor.authorTan, L.-S.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:46:00Z
dc.date.available2014-10-07T04:46:00Z
dc.date.issued2009
dc.identifier.citationChin, H.-C.,Liu, X.,Tan, L.-S.,Yeo, Y.-C. (2009). Inversion-type surface channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 143-144. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VTSA.2009.5159330" target="_blank">https://doi.org/10.1109/VTSA.2009.5159330</a>
dc.identifier.isbn9781424427857
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83858
dc.description.abstractWe report the first demonstration of a surface channel inversion-type In0.53Ga0.47As n-MOSFET featuring gold-free palladiumgermanium (PdGe) ohmic contacts and self-aligned S/D formed by silicon and phosphorus co-implantation. A gate stack comprising TaN/HfAlO/In 0.53Ga0.47As is also featured. Excellent transistor output characteristics with high drain current on/off ratio of 104, high peak electron mobility of 1420 cm2/Vs and peak transconductance of 142 mS/mm at gate length of 2 μm were demonstrated. In addition, the integration of low resistance PdGe ohmic contacts on In0.53Ga 0.47As alleviates contamination concerns associated with the common use of gold-based contacts on In0.53Ga0.47As. ©2009 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/VTSA.2009.5159330
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/VTSA.2009.5159330
dc.description.sourcetitleInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
dc.description.page143-144
dc.identifier.isiutNOT_IN_WOS
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