Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3118959
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dc.titleIntegration of Al segregated NiSiGe/SiGe source/drain contact technology in p-FinFETs for drive current enhancement
dc.contributor.authorSinha, M.
dc.contributor.authorLee, R.T.P.
dc.contributor.authorDevi, S.N.
dc.contributor.authorLo, G.-Q.
dc.contributor.authorChor, E.F.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:45:55Z
dc.date.available2014-10-07T04:45:55Z
dc.date.issued2009
dc.identifier.citationSinha, M., Lee, R.T.P., Devi, S.N., Lo, G.-Q., Chor, E.F., Yeo, Y.-C. (2009). Integration of Al segregated NiSiGe/SiGe source/drain contact technology in p-FinFETs for drive current enhancement. ECS Transactions 19 (1) : 323-330. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3118959
dc.identifier.isbn9781566777094
dc.identifier.issn19385862
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83851
dc.description.abstractThis paper demonstrates the integration of a novel aluminum (Al) segregated NiSiGe/p+-SiGe S/D contact junction in strained trigate p-FinFETs for drive current enhancement. Al is introduced by ion implant into p +-SiGe S/D region followed by nickel deposition and germano-silicidation. Drive current enhancement of ∼25 % is achieved in p-FinFETs without any degradation of device short channel effects. Devices with and without Al implant show similar threshold voltage, drain induced barrier lowering and subthreshold swing. The drive current enhancement is attributed to the lowering of the effective Schottky barrier height of holes (ΦBeff p) for NiSiGe on SiGe from 0.53 eV to 0.12 eV with the low dose Al implant of 2×1014 atoms/cm2, leading to lowering of contact resistance at the NiSiGe/p+-SiGe S/D interface. Al present at the NiSiGe/p+-SiGe interface thins down the Schottky barrier width, which is responsible for the lowering of ΦBeff p.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.3118959
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1149/1.3118959
dc.description.sourcetitleECS Transactions
dc.description.volume19
dc.description.issue1
dc.description.page323-330
dc.identifier.isiut000272170600034
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