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Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2727393
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dc.titleImproved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices
dc.contributor.authorZang, H.
dc.contributor.authorLoh, W.Y.
dc.contributor.authorOh, H.J.
dc.contributor.authorChoi, K.J.
dc.contributor.authorNguyen, H.S.
dc.contributor.authorLo, G.Q.
dc.contributor.authorCho, B.J.
dc.date.accessioned2014-10-07T04:45:38Z
dc.date.available2014-10-07T04:45:38Z
dc.date.issued2007
dc.identifier.citationZang, H.,Loh, W.Y.,Oh, H.J.,Choi, K.J.,Nguyen, H.S.,Lo, G.Q.,Cho, B.J. (2007). Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices. ECS Transactions 6 (1) : 105-110. ScholarBank@NUS Repository. <a href="https://doi.org/10.1149/1.2727393" target="_blank">https://doi.org/10.1149/1.2727393</a>
dc.identifier.isbn9781566775502
dc.identifier.issn19385862
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83827
dc.description.abstractWe report a novel Si/Si1-xGex channel with improved current drivability and reliability using a buried Si0.99C 0.01. It is also found that the Si/Si1-xGe x/Si0.99C0.01 structure is effective in reducing Ge out-diffusion which helps to improve gate dielectric interface quality. © The Electrochemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.2727393
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1149/1.2727393
dc.description.sourcetitleECS Transactions
dc.description.volume6
dc.description.issue1
dc.description.page105-110
dc.identifier.isiutNOT_IN_WOS
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