Please use this identifier to cite or link to this item: https://doi.org/10.1109/IECON.2013.6700325
DC FieldValue
dc.titleImpacts of reactive power injections on thermal performances of PV inverters
dc.contributor.authorSreechithra, S.M.
dc.contributor.authorJirutitijaroen, P.
dc.contributor.authorRathore, A.K.
dc.date.accessioned2014-10-07T04:45:34Z
dc.date.available2014-10-07T04:45:34Z
dc.date.issued2013
dc.identifier.citationSreechithra, S.M.,Jirutitijaroen, P.,Rathore, A.K. (2013). Impacts of reactive power injections on thermal performances of PV inverters. IECON Proceedings (Industrial Electronics Conference) : 7175-7180. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IECON.2013.6700325" target="_blank">https://doi.org/10.1109/IECON.2013.6700325</a>
dc.identifier.isbn9781479902248
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83822
dc.description.abstractThis paper analyzes the impacts of reactive power injections by PV inverters on thermal performances of their components. The analysis is focus on three weakest components in PV inverters, namely, IGBTs, diodes and a DC link capacitor. Reactive power injections cause additional losses such as conduction losses and switching losses in IGBTs and diodes and conduction losses due to double frequency current ripples in a capacitor. These losses cause temperature rise in the devices. This paper simulates the thermal performances of PV inverters using PSIM software and verifies the results using analytical expression of conduction and switching losses. It is found that reactive power injections cause additional temperature rise in all the devices. Leading power factor operations result in a slightly higher temperature rise in IGBTs and diodes than lagging power factor operations. © 2013 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/IECON.2013.6700325
dc.sourceScopus
dc.subjectPV inverter
dc.subjectReactive power injection
dc.subjectThermal performance
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/IECON.2013.6700325
dc.description.sourcetitleIECON Proceedings (Industrial Electronics Conference)
dc.description.page7175-7180
dc.description.codenIEPRE
dc.identifier.isiutNOT_IN_WOS
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