Please use this identifier to cite or link to this item:
https://doi.org/10.1109/RELPHY.2007.369569
DC Field | Value | |
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dc.title | Hot carrier reliability of strained N-MOSFET with lattice mismatched source/drain stressors | |
dc.contributor.author | Ang, K.-W. | |
dc.contributor.author | Wan, C. | |
dc.contributor.author | Chui, K.-J. | |
dc.contributor.author | Tung, C.-H. | |
dc.contributor.author | Balasubramanian, N. | |
dc.contributor.author | Li, M.-F. | |
dc.contributor.author | Samudra, G. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:45:23Z | |
dc.date.available | 2014-10-07T04:45:23Z | |
dc.date.issued | 2007 | |
dc.identifier.citation | Ang, K.-W., Wan, C., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Li, M.-F., Samudra, G., Yeo, Y.-C. (2007). Hot carrier reliability of strained N-MOSFET with lattice mismatched source/drain stressors. Annual Proceedings - Reliability Physics (Symposium) : 684-685. ScholarBank@NUS Repository. https://doi.org/10.1109/RELPHY.2007.369569 | |
dc.identifier.isbn | 1424409195 | |
dc.identifier.issn | 00999512 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83804 | |
dc.description.abstract | The hot carrier reliability of a novel uniaxial tensile strained n-channel transistor with silicon-carbon (Si1-yCy) source and drain (S/D) regions is investigated for the first time. Strained n-FETs show reduced hot carrier lifetime than the control n-FETs when stressed at comparable I sub/Id ratio. Worst case hot carrier stressing is observed to occur at maximum substrate current Isub condition which leads to a higher drive current IDsat degradation as compared to the V GS= VDS stress. At nominal operating voltages, the strained n-FET is projected to have a hot carrier lifetime well exceeding the 10-years requirement, showing no severe reliability issues. © 2007 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/RELPHY.2007.369569 | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/RELPHY.2007.369569 | |
dc.description.sourcetitle | Annual Proceedings - Reliability Physics (Symposium) | |
dc.description.page | 684-685 | |
dc.description.coden | ARLPB | |
dc.identifier.isiut | 000246989600153 | |
Appears in Collections: | Staff Publications |
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