GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack

Abstract

By using novel surface passivation techniques (Plasma Nitridation, AlN-passivation) on GaAs, we demonstrate GaAs p- and n-MOS devices integrated with ALD-HfO2/TaN gate stack. Results show that robust passivation layers can be achieved at HfO2/GaAs interface, leading to good C-V characteristics on both n- and p-type GaAs with low leakage current. It is also found that GaAs MOS devices with plasma nitridation and AlN-passivation show higher thermal-stability than Si-passivated devices.