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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/83738
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dc.titleFemtosecond laser-induced crystallization in as-deposited Ge 1Sb 2Te 4 films
dc.contributor.authorWang, Q.F.
dc.contributor.authorShi, L.P.
dc.contributor.authorHuang, S.M.
dc.contributor.authorMiao, X.S.
dc.contributor.authorWong, K.P.
dc.contributor.authorChong, T.C.
dc.date.accessioned2014-10-07T04:44:36Z
dc.date.available2014-10-07T04:44:36Z
dc.date.issued2003
dc.identifier.citationWang, Q.F.,Shi, L.P.,Huang, S.M.,Miao, X.S.,Wong, K.P.,Chong, T.C. (2003). Femtosecond laser-induced crystallization in as-deposited Ge 1Sb 2Te 4 films. Materials Research Society Symposium - Proceedings 803 : 239-244. ScholarBank@NUS Repository.
dc.identifier.issn02729172
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83738
dc.description.abstractTime resolved imaging has been used to investigate the whole process of the crystallization induced by intense 130 femtosecond laser pulses in as-deposited Ge 1Sb 2Te 4 films. With an average fluence of 24mJ/cm 2, a transient non-equilibrium state of the excited material is formed within 1 picosecond. The results are consistent with an electronically induced non-thermal phase transition.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleMaterials Research Society Symposium - Proceedings
dc.description.volume803
dc.description.page239-244
dc.description.codenMRSPD
dc.identifier.isiutNOT_IN_WOS
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