Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/83697
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dc.titleEngineering of voltage nonlinearity in high-K MIM capacitor for analog/mixed-signal ICs
dc.contributor.authorKim, S.J.
dc.contributor.authorCho, B.J.
dc.contributor.authorLi, M.-F.
dc.contributor.authorDing, S.-J.
dc.contributor.authorYu, M.B.
dc.contributor.authorZhu, C.
dc.contributor.authorChin, A.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:44:09Z
dc.date.available2014-10-07T04:44:09Z
dc.date.issued2004
dc.identifier.citationKim, S.J.,Cho, B.J.,Li, M.-F.,Ding, S.-J.,Yu, M.B.,Zhu, C.,Chin, A.,Kwong, D.-L. (2004). Engineering of voltage nonlinearity in high-K MIM capacitor for analog/mixed-signal ICs. Digest of Technical Papers - Symposium on VLSI Technology : 218-219. ScholarBank@NUS Repository.
dc.identifier.issn07431562
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83697
dc.description.abstractIt is demonstrated for the first time that voltage linearity coefficients (VCC) of metal-insulator-metal (MIM) capacitors can be engineered and virtually zero VCC can be achieved by using stacked insulator structure of high-K and SiO 2 dielectrics. Capacitance density of 6 fF/μm 2 and VCC of 14 ppm/V 2 achieved in this work are the best ever reported. The HfO 2/SiO 2 stacked MIM shows excellent performance in other parameters as well, such as low leakage current, low TCC, and stable frequency dependence.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleDigest of Technical Papers - Symposium on VLSI Technology
dc.description.page218-219
dc.description.codenDTPTE
dc.identifier.isiutNOT_IN_WOS
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