Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/83697
DC Field | Value | |
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dc.title | Engineering of voltage nonlinearity in high-K MIM capacitor for analog/mixed-signal ICs | |
dc.contributor.author | Kim, S.J. | |
dc.contributor.author | Cho, B.J. | |
dc.contributor.author | Li, M.-F. | |
dc.contributor.author | Ding, S.-J. | |
dc.contributor.author | Yu, M.B. | |
dc.contributor.author | Zhu, C. | |
dc.contributor.author | Chin, A. | |
dc.contributor.author | Kwong, D.-L. | |
dc.date.accessioned | 2014-10-07T04:44:09Z | |
dc.date.available | 2014-10-07T04:44:09Z | |
dc.date.issued | 2004 | |
dc.identifier.citation | Kim, S.J.,Cho, B.J.,Li, M.-F.,Ding, S.-J.,Yu, M.B.,Zhu, C.,Chin, A.,Kwong, D.-L. (2004). Engineering of voltage nonlinearity in high-K MIM capacitor for analog/mixed-signal ICs. Digest of Technical Papers - Symposium on VLSI Technology : 218-219. ScholarBank@NUS Repository. | |
dc.identifier.issn | 07431562 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83697 | |
dc.description.abstract | It is demonstrated for the first time that voltage linearity coefficients (VCC) of metal-insulator-metal (MIM) capacitors can be engineered and virtually zero VCC can be achieved by using stacked insulator structure of high-K and SiO 2 dielectrics. Capacitance density of 6 fF/μm 2 and VCC of 14 ppm/V 2 achieved in this work are the best ever reported. The HfO 2/SiO 2 stacked MIM shows excellent performance in other parameters as well, such as low leakage current, low TCC, and stable frequency dependence. | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.sourcetitle | Digest of Technical Papers - Symposium on VLSI Technology | |
dc.description.page | 218-219 | |
dc.description.coden | DTPTE | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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