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Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSI-TSA.2012.6210150
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dc.titleEmbedded Metal Source/Drain (eMSD) for series resistance reduction in In 0.53Ga 0.47As N-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET)
dc.contributor.authorSubramanian, S.
dc.contributor.authorIvana
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:44:06Z
dc.date.available2014-10-07T04:44:06Z
dc.date.issued2012
dc.identifier.citationSubramanian, S.,Ivana,Yeo, Y.-C. (2012). Embedded Metal Source/Drain (eMSD) for series resistance reduction in In 0.53Ga 0.47As N-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET). International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VLSI-TSA.2012.6210150" target="_blank">https://doi.org/10.1109/VLSI-TSA.2012.6210150</a>
dc.identifier.isbn9781457720840
dc.identifier.issn19308868
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83692
dc.description.abstractWe report a novel n-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET) comprising an embedded Metal Source/Drain (eMSD) formed in a quasi-insulating InAlAs region. The InAlAs barrier layer reduces off-state leakage current I OFF significantly. The eMSD consists of conductive Ni-InGaAs and Ni-InAlAs layers, and has a low sheet resistance R sh of ∼20 Ω/square. This achieves a significant reduction in the parasitic S/D resistance R sd, as compared with a conventional UTB-FET with thin S/D. © 2012 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/VLSI-TSA.2012.6210150
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/VLSI-TSA.2012.6210150
dc.description.sourcetitleInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
dc.description.page-
dc.identifier.isiutNOT_IN_WOS
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