Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1853751
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dc.titleEffect of contact geometry on the magnetoresistance response of Ni 80 Fe 20 antidot array
dc.contributor.authorWang, C.C.
dc.contributor.authorAdeyeye, A.O.
dc.contributor.authorWu, Y.H.
dc.date.accessioned2014-10-07T04:43:46Z
dc.date.available2014-10-07T04:43:46Z
dc.date.issued2005-05-15
dc.identifier.citationWang, C.C., Adeyeye, A.O., Wu, Y.H. (2005-05-15). Effect of contact geometry on the magnetoresistance response of Ni 80 Fe 20 antidot array. Journal of Applied Physics 97 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1853751
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83663
dc.description.abstractThe effect of electrical contact geometry on the shape and sign of the magnetoresistance (MR) response in micron-size antirectangular array structures has been investigated. The MR response is strongly sensitive to the direction of the applied sense current. The results can be attributed to the competing anisotropic MR effects from two inhomogeneous orthogonal current flows in the structure. We have also investigated the effect of film thickness on the overall MR responses, and observed that as film thickness decreases, the switching field and MR ratio decrease accordingly and the competition between the anisotropic MR effects becomes more evident. © 2005 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1853751
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1853751
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume97
dc.description.issue10
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000230168500085
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