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Please use this identifier to cite or link to this item: https://doi.org/10.1109/PGC.2010.5706006
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dc.titleDry etching of LiNbO3 using inductively coupled Plasma
dc.contributor.authorDeng, J.
dc.contributor.authorSi, G.
dc.contributor.authorDanner, A.J.
dc.date.accessioned2014-10-07T04:43:37Z
dc.date.available2014-10-07T04:43:37Z
dc.date.issued2010
dc.identifier.citationDeng, J.,Si, G.,Danner, A.J. (2010). Dry etching of LiNbO3 using inductively coupled Plasma. 2010 Photonics Global Conference, PGC 2010 : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/PGC.2010.5706006" target="_blank">https://doi.org/10.1109/PGC.2010.5706006</a>
dc.identifier.isbn9781424498826
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83650
dc.description.abstractIn this letter, we report ridge waveguides fabricated on X-cut proton exchange (PE)-LiNbO3 using inductively coupled plasma (ICP) etching techniques. Various etching masks and fluorine gases are investigated. Smooth etched surfaces are obtained by using Cr as a mask combined with SF 6/Ar etching gases. A high etch rate of 97.5 nm/min is achieved by using CHF3/Ar gases. Ridge waveguides with approximately 600nm depth, smooth surfaces and nearly vertical sidewalls are successfully fabricated using optimized etching conditions.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/PGC.2010.5706006
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/PGC.2010.5706006
dc.description.sourcetitle2010 Photonics Global Conference, PGC 2010
dc.description.page-
dc.identifier.isiutNOT_IN_WOS
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