Please use this identifier to cite or link to this item: https://doi.org/10.1109/IWCE.2009.5091104
Title: Device performance of graphene nanoribbon field effect transistors with edge roughness effects: A computational study
Authors: Leong, Z.-Y.
Lam, K.-T.
Liang, G. 
Keywords: Edge roughness
FET
Graphene
Nanoribbon
NEGF
Issue Date: 2009
Citation: Leong, Z.-Y.,Lam, K.-T.,Liang, G. (2009). Device performance of graphene nanoribbon field effect transistors with edge roughness effects: A computational study. Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IWCE.2009.5091104
Abstract: The device performance of armchair edge graphene nanoribbon Schottky barrier field effect transistors (A-GNR SBFETs) over different edge roughness and widths are investigated over a wide range of devices in terms of I ON/I OFF. Generally, wider GNRs outperform narrower GNRs in the presence of edge roughness effects with average leakage current reduced up to ∼400% less. . The average leakage current for 2.2nm width GNR SBFETs increased 2.7 times when edge roughness increased from 5% to 10%, while the same for 1.4nm widths increased 11.2 times In addition, a small amount of ER of 5% is well tolerated by all GNR SBFETs, with the average I ON/I OFF lowered from 4012 to 3075 for 1.4nm widths. However, a further increase in ER to 20% degrades performance greatly, dropping I ON/I OFF to 273. The generally reliable performance of GNR SBFETs at small edge irregularities over channel widths is reported and a detailed statistical investigation provided. ©2009 IEEE.
Source Title: Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009
URI: http://scholarbank.nus.edu.sg/handle/10635/83630
ISBN: 9781424439270
DOI: 10.1109/IWCE.2009.5091104
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