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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/83534
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dc.titleCharacteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide films
dc.contributor.authorChoi, W.K.
dc.contributor.authorShi, J.
dc.contributor.authorChor, E.F.
dc.date.accessioned2014-10-07T04:42:18Z
dc.date.available2014-10-07T04:42:18Z
dc.date.issued2003-07
dc.identifier.citationChoi, W.K.,Shi, J.,Chor, E.F. (2003-07). Characteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide films. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21 (4) : 1415-1421. ScholarBank@NUS Repository.
dc.identifier.issn10711023
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83534
dc.description.abstractThe inductive coupled plasma etching of as-prepared and annealed hydrogenated amorphous silicon carbide films using CF4/O2 chemistry was analyzed. The etch rate of the as-prepared films was found to decrease with the decrease in the carbon content in the films. The infrared spectroscopy results show the effusion of hydrogen when the film was annealed.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
dc.description.volume21
dc.description.issue4
dc.description.page1415-1421
dc.description.codenJVTBD
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Staff Publications

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