Please use this identifier to cite or link to this item: https://doi.org/10.1109/VTSA.2011.5872215
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dc.titleBias temperature instability (BTI) characteristics of graphene Field-Effect Transistors
dc.contributor.authorLiu, B.
dc.contributor.authorYang, M.
dc.contributor.authorZhan, C.
dc.contributor.authorYang, Y.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:42:04Z
dc.date.available2014-10-07T04:42:04Z
dc.date.issued2011
dc.identifier.citationLiu, B.,Yang, M.,Zhan, C.,Yang, Y.,Yeo, Y.-C. (2011). Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 22-23. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VTSA.2011.5872215" target="_blank">https://doi.org/10.1109/VTSA.2011.5872215</a>
dc.identifier.isbn9781424484928
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83512
dc.description.abstractWe report a bias temperature instability (BTI) study of graphene Field-Effect Transistor (G-FET) for the first time. New BTI characteristics are observed for G-FETs fabricated using a graphene transfer-free process. Temperature significantly affects BTI of G-FETs by changing the direction of shift of IDS. A plausible graphene BTI mechanism is discussed. © 2011 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/VTSA.2011.5872215
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/VTSA.2011.5872215
dc.description.sourcetitleInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
dc.description.page22-23
dc.identifier.isiutNOT_IN_WOS
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