Please use this identifier to cite or link to this item: https://doi.org/10.1109/NANO.2008.126
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dc.titleAn ab initio investigation of monolayer and bilayer graphene nanoribbon based on different basis sets
dc.contributor.authorLam, K.-T.
dc.contributor.authorLiang, G.
dc.date.accessioned2014-10-07T04:41:25Z
dc.date.available2014-10-07T04:41:25Z
dc.date.issued2008
dc.identifier.citationLam, K.-T.,Liang, G. (2008). An ab initio investigation of monolayer and bilayer graphene nanoribbon based on different basis sets. 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO : 409-411. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/NANO.2008.126" target="_blank">https://doi.org/10.1109/NANO.2008.126</a>
dc.identifier.isbn9781424421046
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83454
dc.description.abstractWe investigated the electronic structure of monolayer and bilayer graphene nanoribbon with armchair edges (AGNRM and AGNRB respectively) based on Density Functional Theory using single-ζ (SZ) and double -ζ (polarized) (DZP) basis sets. We first optimize the atomic structure of an AGNRB and found that DZP is better suited to account for the interlayer Interaction. Next we calculate the energy band diagram of the AGNRM and AGNRB of different width, and study dependence of the band gap (Eg) on the widths. Like AGNRM, AGNR B also shows three different groups in terms of energy bandgap vs. width. In general, AGNRB is found to have a lower Eg than AGNRM. Especially for N=3p+2 family, while it is semiconducting for AGNRM, the Eg of AGNRB is very small and can be considered as metallic at room temperature. Furthermore, we investigate the relationship between Eg and the interlayer distance (D) of AGNR B. From our calculation, Eg is found to be strongly influenced by D and Egincreases as D increases. Finally, comparing solely on Eg we can see that both SZ and DZP calculations provide information on the three trends of the AGNRM and AGNRB, with small differences in the absolute values and hence it may be possible to use SZ for rapid preliminary investigation of the electronic properties of AGNR systems. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/NANO.2008.126
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/NANO.2008.126
dc.description.sourcetitle2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
dc.description.page409-411
dc.identifier.isiutNOT_IN_WOS
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