A robust and accurate drain current I-V model for MESFET

Abstract

A new empirical model has been developed to more accurately model DC I-V characteristics of GaAs MESFET transistor. The new model equations describe device drain current as a polynomial of effective gate-source voltage Veff. It is capable of accurately model the device current-voltage behaviour at different operation regions. Most specially, device operation around pinch-off region is more accurately described through the use of a specially designed transformation. Measured and modelled results are compared, and good agreement has been obtained. Comparison between the proposed model, the Curtice [1] and the Chalmers model [2] are also made.