Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2007.4418881
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dc.titleA new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistors
dc.contributor.authorTan, K.-M.
dc.contributor.authorZhu, M.
dc.contributor.authorFang, W.-W.
dc.contributor.authorYang, M.
dc.contributor.authorLiow, T.-Y.
dc.contributor.authorLee, R.T.P.
dc.contributor.authorHoe, K.M.
dc.contributor.authorTung, C.-H.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorSamudra, G.S.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:40:37Z
dc.date.available2014-10-07T04:40:37Z
dc.date.issued2007
dc.identifier.citationTan, K.-M., Zhu, M., Fang, W.-W., Yang, M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2007). A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistors. Technical Digest - International Electron Devices Meeting, IEDM : 127-130. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2007.4418881
dc.identifier.issn01631918
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83384
dc.description.abstractWe report a new liner stressor comprising a diamond-like carbon (DLC) layer with very high intrinsic stress for boosting the performance of p-channel transistors. A record-high intrinsic compressive stress of more than 6 GPa is demonstrated, well exceeding values currently achievable with the conventional SiN contact etch-stop layer (CESL). Two major advantages of the DLC layer are lower permittivity and significantly higher compressive stress, therefore enabling further pitch and density scaling with less performance compromise. We integrated the DLC liner stressor with nanoscale SOI p-FETs, demonstrating significant drive current ID,sat enhancement of up to 58% over control devices without liner stressor. © 2007 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/IEDM.2007.4418881
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentNUS NANOSCIENCE & NANOTECH INITIATIVE
dc.description.doi10.1109/IEDM.2007.4418881
dc.description.sourcetitleTechnical Digest - International Electron Devices Meeting, IEDM
dc.description.page127-130
dc.description.codenTDIMD
dc.identifier.isiut000259347800026
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