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|Title:||A Ka-band lumped element dual-behavior resonator (DBR) filter in standard 0.13-μm CMOS technology||Authors:||Lu, X.
|Keywords:||Bandpass filter (BPF)
Dual-Behavior Resonator (DBR)
|Issue Date:||2013||Citation:||Lu, X.,Mouthaan, K.,Soon, Y.T. (2013). A Ka-band lumped element dual-behavior resonator (DBR) filter in standard 0.13-μm CMOS technology. Asia-Pacific Microwave Conference Proceedings, APMC : 488-490. ScholarBank@NUS Repository. https://doi.org/10.1109/APMC.2013.6694840||Abstract:||A Ka-band lumped element Dual-Behavior Resonator (DBR) filter in 0.13-μm CMOS is presented. The DBR filter consists of Dual-Behavior Resonators (DBRs) and inverters connecting the DBRs. The inverters and the DBRs, which define the stopband transmission zeros, are realized by CMOS spriral inductors and metal-insulator-metal (MIM) capacitors. A second order DBR filter with two transmission zeros is designed and fabricated in standard 0.13-μm CMOS technology. The measured filter has a 3-dB bandwidth of 15% at the center frequency of 27.8 GHz. High rejections larger than 48 dB are realized at the two transmission zero frequencies of 20.2 GHz and 37 GHz. © 2013 IEEE.||Source Title:||Asia-Pacific Microwave Conference Proceedings, APMC||URI:||http://scholarbank.nus.edu.sg/handle/10635/83360||ISBN:||9781479914746||DOI:||10.1109/APMC.2013.6694840|
|Appears in Collections:||Staff Publications|
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