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Title: A Ka-band lumped element dual-behavior resonator (DBR) filter in standard 0.13-μm CMOS technology
Authors: Lu, X.
Mouthaan, K. 
Soon, Y.T. 
Keywords: Bandpass filter (BPF)
CMOS technology
Dual-Behavior Resonator (DBR)
lumped element
Issue Date: 2013
Citation: Lu, X.,Mouthaan, K.,Soon, Y.T. (2013). A Ka-band lumped element dual-behavior resonator (DBR) filter in standard 0.13-μm CMOS technology. Asia-Pacific Microwave Conference Proceedings, APMC : 488-490. ScholarBank@NUS Repository.
Abstract: A Ka-band lumped element Dual-Behavior Resonator (DBR) filter in 0.13-μm CMOS is presented. The DBR filter consists of Dual-Behavior Resonators (DBRs) and inverters connecting the DBRs. The inverters and the DBRs, which define the stopband transmission zeros, are realized by CMOS spriral inductors and metal-insulator-metal (MIM) capacitors. A second order DBR filter with two transmission zeros is designed and fabricated in standard 0.13-μm CMOS technology. The measured filter has a 3-dB bandwidth of 15% at the center frequency of 27.8 GHz. High rejections larger than 48 dB are realized at the two transmission zero frequencies of 20.2 GHz and 37 GHz. © 2013 IEEE.
Source Title: Asia-Pacific Microwave Conference Proceedings, APMC
ISBN: 9781479914746
DOI: 10.1109/APMC.2013.6694840
Appears in Collections:Staff Publications

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