Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.egypro.2012.07.091
DC Field | Value | |
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dc.title | 19% efficient inline-diffused large-area screen-printed Al-LBSF silicon wafer solar cells | |
dc.contributor.author | Basu, P.K. | |
dc.contributor.author | Shetty, K.D. | |
dc.contributor.author | Vinodh, S. | |
dc.contributor.author | Sarangi, D. | |
dc.contributor.author | Palina, N. | |
dc.contributor.author | Duttagupta, S. | |
dc.contributor.author | Lin, F. | |
dc.contributor.author | Du, Z. | |
dc.contributor.author | Chen, J. | |
dc.contributor.author | Hoex, B. | |
dc.contributor.author | Boreland, M.B. | |
dc.contributor.author | Aberle, A.G. | |
dc.date.accessioned | 2014-10-07T04:39:35Z | |
dc.date.available | 2014-10-07T04:39:35Z | |
dc.date.issued | 2012 | |
dc.identifier.citation | Basu, P.K., Shetty, K.D., Vinodh, S., Sarangi, D., Palina, N., Duttagupta, S., Lin, F., Du, Z., Chen, J., Hoex, B., Boreland, M.B., Aberle, A.G. (2012). 19% efficient inline-diffused large-area screen-printed Al-LBSF silicon wafer solar cells. Energy Procedia 27 : 444-448. ScholarBank@NUS Repository. https://doi.org/10.1016/j.egypro.2012.07.091 | |
dc.identifier.issn | 18766102 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83292 | |
dc.description.abstract | Presently, large-area high-efficiency (> 19%) screen printed p-type silicon solar cells are dominated by the aluminium local back surface field (Al-LBSF) technology. However, all those cells were fabricated with tube diffused emitters. Inline diffusion, using phosphoric acid as the dopant source, offers potentially low-cost emitter formation for p-type silicon wafer solar cells. To achieve higher efficiencies for these solar cells, the authors have applied a new Si etch solution to remove the dead layer of the inline diffused emitter. Efficiencies up to 18.3% were obtained for standard Al back surface field (Al-BSF) solar cells. In this work, the same etch-back process was applied to Al-LBSF devices. We report a maximum efficiency of 19.0%, an average batch efficiency of 18.9% (± 0.1% StDev), and a maximum open-circuit voltage of 640 mV for the cells, using industry-grade p-type 6 inch wide pseudosquare Cz mono-Si wafers. These results indicate that inline-diffused emitters can be used in high-efficiency silicon wafer solar cells. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.egypro.2012.07.091 | |
dc.source | Scopus | |
dc.subject | Al-LBSF | |
dc.subject | Inline emitter diffusion | |
dc.subject | Laser opening | |
dc.subject | SERIS etch | |
dc.subject | Singlecrystalline silicon wafer | |
dc.type | Conference Paper | |
dc.contributor.department | SOLAR ENERGY RESEARCH INST OF S'PORE | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1016/j.egypro.2012.07.091 | |
dc.description.sourcetitle | Energy Procedia | |
dc.description.volume | 27 | |
dc.description.page | 444-448 | |
dc.identifier.isiut | 000313202000072 | |
Appears in Collections: | Staff Publications |
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