Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.egypro.2012.07.091
DC FieldValue
dc.title19% efficient inline-diffused large-area screen-printed Al-LBSF silicon wafer solar cells
dc.contributor.authorBasu, P.K.
dc.contributor.authorShetty, K.D.
dc.contributor.authorVinodh, S.
dc.contributor.authorSarangi, D.
dc.contributor.authorPalina, N.
dc.contributor.authorDuttagupta, S.
dc.contributor.authorLin, F.
dc.contributor.authorDu, Z.
dc.contributor.authorChen, J.
dc.contributor.authorHoex, B.
dc.contributor.authorBoreland, M.B.
dc.contributor.authorAberle, A.G.
dc.date.accessioned2014-10-07T04:39:35Z
dc.date.available2014-10-07T04:39:35Z
dc.date.issued2012
dc.identifier.citationBasu, P.K., Shetty, K.D., Vinodh, S., Sarangi, D., Palina, N., Duttagupta, S., Lin, F., Du, Z., Chen, J., Hoex, B., Boreland, M.B., Aberle, A.G. (2012). 19% efficient inline-diffused large-area screen-printed Al-LBSF silicon wafer solar cells. Energy Procedia 27 : 444-448. ScholarBank@NUS Repository. https://doi.org/10.1016/j.egypro.2012.07.091
dc.identifier.issn18766102
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83292
dc.description.abstractPresently, large-area high-efficiency (> 19%) screen printed p-type silicon solar cells are dominated by the aluminium local back surface field (Al-LBSF) technology. However, all those cells were fabricated with tube diffused emitters. Inline diffusion, using phosphoric acid as the dopant source, offers potentially low-cost emitter formation for p-type silicon wafer solar cells. To achieve higher efficiencies for these solar cells, the authors have applied a new Si etch solution to remove the dead layer of the inline diffused emitter. Efficiencies up to 18.3% were obtained for standard Al back surface field (Al-BSF) solar cells. In this work, the same etch-back process was applied to Al-LBSF devices. We report a maximum efficiency of 19.0%, an average batch efficiency of 18.9% (± 0.1% StDev), and a maximum open-circuit voltage of 640 mV for the cells, using industry-grade p-type 6 inch wide pseudosquare Cz mono-Si wafers. These results indicate that inline-diffused emitters can be used in high-efficiency silicon wafer solar cells.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.egypro.2012.07.091
dc.sourceScopus
dc.subjectAl-LBSF
dc.subjectInline emitter diffusion
dc.subjectLaser opening
dc.subjectSERIS etch
dc.subjectSinglecrystalline silicon wafer
dc.typeConference Paper
dc.contributor.departmentSOLAR ENERGY RESEARCH INST OF S'PORE
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.egypro.2012.07.091
dc.description.sourcetitleEnergy Procedia
dc.description.volume27
dc.description.page444-448
dc.identifier.isiut000313202000072
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

7
checked on Feb 25, 2020

WEB OF SCIENCETM
Citations

7
checked on Feb 25, 2020

Page view(s)

132
checked on Feb 16, 2020

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.