Please use this identifier to cite or link to this item:
https://doi.org/10.1109/TED.2008.2011572
DC Field | Value | |
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dc.title | Work function engineering within a single metal gate stack: Manipulating terbium- and aluminum-induced interface dipoles of opposing polarity | |
dc.contributor.author | Lim, A.E.-J. | |
dc.contributor.author | Kwong, D.-L. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:39:24Z | |
dc.date.available | 2014-10-07T04:39:24Z | |
dc.date.issued | 2009 | |
dc.identifier.citation | Lim, A.E.-J., Kwong, D.-L., Yeo, Y.-C. (2009). Work function engineering within a single metal gate stack: Manipulating terbium- and aluminum-induced interface dipoles of opposing polarity. IEEE Transactions on Electron Devices 56 (3) : 466-473. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.2011572 | |
dc.identifier.issn | 00189383 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83277 | |
dc.description.abstract | In this paper, a systematic study on combining n-type and p-type interface dipoles for metal gate work function (Φm) engineering within the same gate stack was conducted. Ultrathin terbium (Tb) and aluminum (Al)-based interlayers (ILs) were utilized for n- and p-type dipole formation, respectively, to modulate the net interface dipole magnitude and polarity within a metal gate stack. By controlling the net interface dipole through Tb- and Al-based ILs, continuous TaN Φm tunability of ∼0.7-0.8 eV (after either a 500 °C or 950 °C anneal) on SiO2 dielectric was attained. The reversal of net interface dipole polarity was demonstrated using both TaN/SiO2 and TaN/high-κ gate stacks by varying IL metal species and anneal conditions. A convenient way in reversing a Tb-induced (n-type) dipole through Al-incorporation via the TaN metal gate using a "gate-first" process is also shown. The dominant dipole that results in the metal gate stack hinges critically on the reactions of Al and Tb with SiO2 (or underlying SiO2 for high-κ stacks) for Al-O-(Si) and Tb-O-Si bond formation, respectively. This concept of manipulating interface dipoles of opposing polarity for metal gate Φm tunability could open up new avenues for achieving multiple Φm using a single metal gate and a simple integration scheme. © 2009 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2008.2011572 | |
dc.source | Scopus | |
dc.subject | Aluminum (Al) | |
dc.subject | Interface dipole | |
dc.subject | Metal gate | |
dc.subject | Terbium (Tb) | |
dc.subject | Work function engineering | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/TED.2008.2011572 | |
dc.description.sourcetitle | IEEE Transactions on Electron Devices | |
dc.description.volume | 56 | |
dc.description.issue | 3 | |
dc.description.page | 466-473 | |
dc.description.coden | IETDA | |
dc.identifier.isiut | 000264019300014 | |
Appears in Collections: | Staff Publications |
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