Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2008.2011572
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dc.titleWork function engineering within a single metal gate stack: Manipulating terbium- and aluminum-induced interface dipoles of opposing polarity
dc.contributor.authorLim, A.E.-J.
dc.contributor.authorKwong, D.-L.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:39:24Z
dc.date.available2014-10-07T04:39:24Z
dc.date.issued2009
dc.identifier.citationLim, A.E.-J., Kwong, D.-L., Yeo, Y.-C. (2009). Work function engineering within a single metal gate stack: Manipulating terbium- and aluminum-induced interface dipoles of opposing polarity. IEEE Transactions on Electron Devices 56 (3) : 466-473. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.2011572
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83277
dc.description.abstractIn this paper, a systematic study on combining n-type and p-type interface dipoles for metal gate work function (Φm) engineering within the same gate stack was conducted. Ultrathin terbium (Tb) and aluminum (Al)-based interlayers (ILs) were utilized for n- and p-type dipole formation, respectively, to modulate the net interface dipole magnitude and polarity within a metal gate stack. By controlling the net interface dipole through Tb- and Al-based ILs, continuous TaN Φm tunability of ∼0.7-0.8 eV (after either a 500 °C or 950 °C anneal) on SiO2 dielectric was attained. The reversal of net interface dipole polarity was demonstrated using both TaN/SiO2 and TaN/high-κ gate stacks by varying IL metal species and anneal conditions. A convenient way in reversing a Tb-induced (n-type) dipole through Al-incorporation via the TaN metal gate using a "gate-first" process is also shown. The dominant dipole that results in the metal gate stack hinges critically on the reactions of Al and Tb with SiO2 (or underlying SiO2 for high-κ stacks) for Al-O-(Si) and Tb-O-Si bond formation, respectively. This concept of manipulating interface dipoles of opposing polarity for metal gate Φm tunability could open up new avenues for achieving multiple Φm using a single metal gate and a simple integration scheme. © 2009 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2008.2011572
dc.sourceScopus
dc.subjectAluminum (Al)
dc.subjectInterface dipole
dc.subjectMetal gate
dc.subjectTerbium (Tb)
dc.subjectWork function engineering
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TED.2008.2011572
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume56
dc.description.issue3
dc.description.page466-473
dc.description.codenIETDA
dc.identifier.isiut000264019300014
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