Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.891757
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dc.titleWide Vfband Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics
dc.contributor.authorWang, X.P.
dc.contributor.authorYu, H.Y.
dc.contributor.authorLi, M.-F.
dc.contributor.authorZhu, C.X.
dc.contributor.authorBiesemans, S.
dc.contributor.authorChin, A.
dc.contributor.authorSun, Y.Y.
dc.contributor.authorFeng, Y.P.
dc.contributor.authorLim, A.
dc.contributor.authorYeo, Y.-C.
dc.contributor.authorLoh, W.Y.
dc.contributor.authorLo, G.Q.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:39:16Z
dc.date.available2014-10-07T04:39:16Z
dc.date.issued2007-04
dc.identifier.citationWang, X.P., Yu, H.Y., Li, M.-F., Zhu, C.X., Biesemans, S., Chin, A., Sun, Y.Y., Feng, Y.P., Lim, A., Yeo, Y.-C., Loh, W.Y., Lo, G.Q., Kwong, D.-L. (2007-04). Wide Vfband Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics. IEEE Electron Device Letters 28 (4) : 258-260. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.891757
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83267
dc.description.abstractFor the first time, we demonstrate experimentally that by using HfLaO high-k gate dielectric, the flat-band voltage (Vfb) and the threshold voltage (Vth) of metal-electrode-gated MOS devices can be tuned effectively in a wide range (wider than that from the Si-conduction band edge to the Si-valence band edge) after a 1000-°C annealing required by a conventional CMOS source/drain activation process. As prototype examples shown in this letter, TaN gate with effective work function Φm,eff ∼ 3.9-4.2 eV and Pt gate with Φm,eff ∼ 5.5 eV are reported. A specific model based on the interfacial dipole between the metal gate and the HfLaO is proposed to interpret the results. This provides an additionally practical guideline for choosing the appropriate gate stacks and dielectric to meet the requirements of future CMOS devices. © 2007 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2007.891757
dc.sourceScopus
dc.subjectCMOS
dc.subjectFermi-level pinning
dc.subjectHfLaO
dc.subjectHigh-k (HK) dielectric
dc.subjectInterfacial dipole
dc.subjectMetal gate (MG)
dc.subjectWork function
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2007.891757
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume28
dc.description.issue4
dc.description.page258-260
dc.description.codenEDLED
dc.identifier.isiut000245225300001
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