Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3383234
DC FieldValue
dc.titleWide memory window in graphene oxide charge storage nodes
dc.contributor.authorWang, S.
dc.contributor.authorPu, J.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorCho, B.J.
dc.contributor.authorLoh, K.P.
dc.date.accessioned2014-10-07T04:39:15Z
dc.date.available2014-10-07T04:39:15Z
dc.date.issued2010
dc.identifier.citationWang, S., Pu, J., Chan, D.S.H., Cho, B.J., Loh, K.P. (2010). Wide memory window in graphene oxide charge storage nodes. Applied Physics Letters 96 (14) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3383234
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83266
dc.description.abstractSolution-processable, isolated graphene oxide (GO) monolayers have been used as a charge trapping dielectric in TaN gate/ Al2 O3 /isolated GO sheets/ SiO2 /p-Si memory device (TANOS). The TANOS type structure serves as memory device with the threshold voltage controlled by the amount of charge trapped in the GO sheet. Capacitance-Voltage hysteresis curves reveal a 7.5 V memory window using the sweep voltage of -5-14 V. Thermal reduction in the GO to graphene reduces the memory window to 1.4 V. The unique charge trapping properties of GO points to the potential applications in flexible organic memory devices. © 2010 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3383234
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentCHEMISTRY
dc.description.doi10.1063/1.3383234
dc.description.sourcetitleApplied Physics Letters
dc.description.volume96
dc.description.issue14
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000276554600075
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