Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4812725
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dc.titleTunnel magnetoresistance effect and interface study in magnetic tunnel junctions using epitaxial Fe2CrSi Heusler alloy electrode
dc.contributor.authorWang, Y.-P.
dc.contributor.authorHan, G.-C.
dc.contributor.authorLu, H.
dc.contributor.authorQiu, J.
dc.contributor.authorYap, Q.-J.
dc.contributor.authorJi, R.
dc.contributor.authorTeo, K.-L.
dc.date.accessioned2014-10-07T04:38:48Z
dc.date.available2014-10-07T04:38:48Z
dc.date.issued2013-07-07
dc.identifier.citationWang, Y.-P., Han, G.-C., Lu, H., Qiu, J., Yap, Q.-J., Ji, R., Teo, K.-L. (2013-07-07). Tunnel magnetoresistance effect and interface study in magnetic tunnel junctions using epitaxial Fe2CrSi Heusler alloy electrode. Journal of Applied Physics 114 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4812725
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83228
dc.description.abstractWe report the studies of magnetic tunnel junctions (MTJs) using epitaxially grown Fe2CrSi (FCS) as a bottom electrode. A tunnel magnetoresistance (TMR) ratio of 2.5% was obtained for MTJ at room temperature. The low TMR ratio is attributed to the oxidation of FCS at the interface with MgO barrier. With the insertion of 0.3 nm Mg layer between the FCS and MgO barrier layers, the TMR ratio increases to 8.1%. X-ray Photoelectron Spectroscopy results show that the FCS film is most likely terminated at Fe and Si atomic layers, which is found to be bonded to oxygen at the interface, while Cr remains at metallic state. Post-annealing effect shows that TMR first increases with annealing temperature (Ta) due to improvement in crystalline structure of MgO and top electrode and then decreases due to oxidation of the bottom electrode. The TMR finally disappears due to the depinning of top electrode induced by Mn diffusion at high Ta. © 2013 AIP Publishing LLC.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4812725
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.4812725
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume114
dc.description.issue1
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000321716000024
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