Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-2048/25/12/124003
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dc.titleThe influence of la substitution and oxygen reduction in ambipolar La-doped YBa2Cu3Oy thin films
dc.contributor.authorZeng, S.W.
dc.contributor.authorHuang, Z.
dc.contributor.authorWang, X.
dc.contributor.authorLü, W.M.
dc.contributor.authorLiu, Z.Q.
dc.contributor.authorZhang, B.M.
dc.contributor.authorDhar, S.
dc.contributor.authorVenkatesan, T.
dc.contributor.authorAriando
dc.date.accessioned2014-10-07T04:38:09Z
dc.date.available2014-10-07T04:38:09Z
dc.date.issued2012-12
dc.identifier.citationZeng, S.W., Huang, Z., Wang, X., Lü, W.M., Liu, Z.Q., Zhang, B.M., Dhar, S., Venkatesan, T., Ariando (2012-12). The influence of la substitution and oxygen reduction in ambipolar La-doped YBa2Cu3Oy thin films. Superconductor Science and Technology 25 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-2048/25/12/124003
dc.identifier.issn09532048
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83173
dc.description.abstractWe report hole and electron doping in Y0.38La 0.62(Ba2-xLax)Cu3Oy thin films synthesized by the pulsed laser deposition technique and subsequently annealed in oxygen ambient or in a vacuum. X-ray diffraction studies suggested a single phase in p-type thin films and transport measurements showed a superconductor-to-insulator transition at x = 0.46. Hall measurements indicated electrons were successfully doped when the thin films were annealed in vacuum. The n-type samples demonstrated metallic behaviour within moderate temperature ranges, and a low in-plane resistivity (ρab) and a high carrier density for 0.32 ≤ x ≤ 0.46. The increase in ρab for higher La doping levels, probably caused by charge compensation, is also discussed. The present result could be a significant step in searching for electron-doped superconductivity in the YBa2Cu3Oy system. © 2012 IOP Publishing Ltd.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1088/0953-2048/25/12/124003
dc.description.sourcetitleSuperconductor Science and Technology
dc.description.volume25
dc.description.issue12
dc.description.page-
dc.description.codenSUSTE
dc.identifier.isiut000311418100006
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