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Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.909999
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dc.titleThe effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2
dc.contributor.authorYu, H.P.
dc.contributor.authorPey, K.L.
dc.contributor.authorChoi, W.K.
dc.contributor.authorDawood, M.K.
dc.contributor.authorChew, H.G.
dc.contributor.authorAntoniadis, D.A.
dc.contributor.authorFitzgerald, E.A.
dc.contributor.authorChi, D.Z.
dc.date.accessioned2014-10-07T04:38:00Z
dc.date.available2014-10-07T04:38:00Z
dc.date.issued2007-12
dc.identifier.citationYu, H.P., Pey, K.L., Choi, W.K., Dawood, M.K., Chew, H.G., Antoniadis, D.A., Fitzgerald, E.A., Chi, D.Z. (2007-12). The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2. IEEE Electron Device Letters 28 (12) : 1098-1101. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.909999
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83160
dc.description.abstractIn this letter, the tuning of a nickel fully germanided metal gate effective workfunction via a hyperthin yttrium (Y) interlayer at the bottom of the metal electrode was demonstrated on both SiO2 and HfO2. By varying the Y interlayer thickness from 0 to 9.6 nm, a full range of workfunction tuning from 5.11 to 3.65 eV has been achieved on NiGeY/SiO2 stacks. It was also found that the chemical potential of the material that is adjacent to the gate electrode/gate insulator plays an important role in the determination of the effective workfunction. This workfunction tuning window was observed to decrease to a range of 5.08-4.25 eV on NiGeY/HfO2 stacks. © 2007 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2007.909999
dc.sourceScopus
dc.subjectHigh-κ
dc.subjectMetal gate
dc.subjectMetal gates
dc.subjectNi germanide (NiGe)
dc.subjectNickel
dc.subjectWorkfunction tuning
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2007.909999
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume28
dc.description.issue12
dc.description.page1098-1101
dc.description.codenEDLED
dc.identifier.isiut000251429800008
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