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https://doi.org/10.1063/1.3271352
DC Field | Value | |
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dc.title | Synthetic antiferromagnet with Heusler alloy Co2 FeAl ferromagnetic layers | |
dc.contributor.author | Xu, X.G. | |
dc.contributor.author | Zhang, D.L. | |
dc.contributor.author | Li, X.Q. | |
dc.contributor.author | Bao, J. | |
dc.contributor.author | Jiang, Y. | |
dc.contributor.author | Jalil, M.B.A. | |
dc.date.accessioned | 2014-10-07T04:37:46Z | |
dc.date.available | 2014-10-07T04:37:46Z | |
dc.date.issued | 2009 | |
dc.identifier.citation | Xu, X.G., Zhang, D.L., Li, X.Q., Bao, J., Jiang, Y., Jalil, M.B.A. (2009). Synthetic antiferromagnet with Heusler alloy Co2 FeAl ferromagnetic layers. Journal of Applied Physics 106 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3271352 | |
dc.identifier.issn | 00218979 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83143 | |
dc.description.abstract | Heusler alloy Co2FeAl was employed as ferromagnetic layers in Co2FeAl (3 nm)/Ru(x nm)/Co2FeAl (5 nm) synthetic antiferromagnet structures. The experimental results show that the structure with a Ru thickness of 0.45 nm is strongly antiferromagnetic coupled, which is maintained after annealing at 150 °C for 1 h. The structure has a very low saturation magnetization Ms of 425 emu/ cm3, a low switching field Hsw of 4.3 Oe, and a high saturation field H s of 5257 Oe at room temperature, which are favorable for application in ultrahigh density magnetic read heads or other magnetic memory devices. Crystal structure study testifies that the as-deposited Co2FeAl film is in the B2 phase. Therefore, Heusler alloys can be used to fabricate synthetic antiferromagnetic and it is possible to make "all-Heusler" spin valves or magnetic tunneling junctions with better magnetic switching properties and high magnetoresistance. © 2009 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3271352 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1063/1.3271352 | |
dc.description.sourcetitle | Journal of Applied Physics | |
dc.description.volume | 106 | |
dc.description.issue | 12 | |
dc.description.page | - | |
dc.description.coden | JAPIA | |
dc.identifier.isiut | 000273216500049 | |
Appears in Collections: | Staff Publications |
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