Please use this identifier to cite or link to this item: https://doi.org/10.1002/1521-396X(200111)188:13.0.CO;2-M
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dc.titleSurface Modification and Ohmic Contact Formation to n and p-Type GaN
dc.contributor.authorChoi, H.W.
dc.contributor.authorChua, S.J.
dc.contributor.authorKang, X.J.
dc.date.accessioned2014-10-07T04:37:32Z
dc.date.available2014-10-07T04:37:32Z
dc.date.issued2001-11
dc.identifier.citationChoi, H.W.,Chua, S.J.,Kang, X.J. (2001-11). Surface Modification and Ohmic Contact Formation to n and p-Type GaN. Physica Status Solidi (A) Applied Research 188 (1) : 399-402. ScholarBank@NUS Repository. <a href="https://doi.org/10.1002/1521-396X(200111)188:13.0.CO;2-M" target="_blank">https://doi.org/10.1002/1521-396X(200111)188:13.0.CO;2-M</a>
dc.identifier.issn00318965
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83123
dc.description.abstractSurface modification of n and p-type GaN using Cl2/N2 and pure N2 plasmas was investigated. It was found that the surface conductivity of n-GaN was reduced when N2 was introduced, as N2 loss was prevented. However, the restoration of stoichiometry improved the resistivity of Ohmic contacts, as N2 was necessary for the formation of TiN. In contrast, N2 plasma exposure was beneficial to improvements of surface conductivities in p-GaN. Contacts deposited on Cl2/N2 etched surfaces exhibit excellent Ohmic characteristics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/1521-396X(200111)188:13.0.CO;2-M
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1002/1521-396X(200111)188:13.0.CO;2-M
dc.description.sourcetitlePhysica Status Solidi (A) Applied Research
dc.description.volume188
dc.description.issue1
dc.description.page399-402
dc.description.codenPSSAB
dc.identifier.isiutNOT_IN_WOS
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