Please use this identifier to cite or link to this item: https://doi.org/10.1109/66.999586
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dc.titleSupply-voltage optimization for below-70-nm technology-node MOSFETs
dc.contributor.authorWakabayashi, H.
dc.contributor.authorSamudra, G.S.
dc.contributor.authorDjomehri, I.J.
dc.contributor.authorNayfeh, H.
dc.contributor.authorAntoniadis, D.A.
dc.date.accessioned2014-10-07T04:37:28Z
dc.date.available2014-10-07T04:37:28Z
dc.date.issued2002-05
dc.identifier.citationWakabayashi, H., Samudra, G.S., Djomehri, I.J., Nayfeh, H., Antoniadis, D.A. (2002-05). Supply-voltage optimization for below-70-nm technology-node MOSFETs. IEEE Transactions on Semiconductor Manufacturing 15 (2) : 151-156. ScholarBank@NUS Repository. https://doi.org/10.1109/66.999586
dc.identifier.issn08946507
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83117
dc.description.abstractA tradeoff between the performance and power consumption is discussed for below-70-nm technology-node MOSFETs, as a function of power-supply voltage. In order to optimize the supply voltage, gate-delay (CV/I)and energy-delay product (C 2V 3/I) trends are evaluated using the characteristics of down to 24-nm physical-gate-length nMOSFETs. The gate-delay dependence on the supply voltage down to 0.9 V is almost constant at the same OFF current of 100 nA/μm. On the other hand, an optimum supply voltage for the energy-delay product significantly depends on the short-channel characteristics, and is interpreted with analytic expressions. Therefore, for the below-70-nm technology node at sub-1.0 V, it is important to design the power-supply voltage taking into consideration of a short-channel effect (SCE).
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/66.999586
dc.sourceScopus
dc.subjectCMOS
dc.subjectEnergy-delay product
dc.subjectGate delay
dc.subjectPower consumption
dc.subjectPower-supply voltage
dc.subjectShort-channel effect
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/66.999586
dc.description.sourcetitleIEEE Transactions on Semiconductor Manufacturing
dc.description.volume15
dc.description.issue2
dc.description.page151-156
dc.description.codenITSME
dc.identifier.isiut000175398400004
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