Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0038-1101(01)00241-6
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dc.titleStructural characterisation of polycrystalline SiGe thin film
dc.contributor.authorTeh, L.K.
dc.contributor.authorChoi, W.K.
dc.contributor.authorBera, L.K.
dc.contributor.authorChim, W.K.
dc.date.accessioned2014-10-07T04:37:14Z
dc.date.available2014-10-07T04:37:14Z
dc.date.issued2001-11
dc.identifier.citationTeh, L.K., Choi, W.K., Bera, L.K., Chim, W.K. (2001-11). Structural characterisation of polycrystalline SiGe thin film. Solid-State Electronics 45 (11) : 1963-1966. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1101(01)00241-6
dc.identifier.issn00381101
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83097
dc.description.abstractAmorphous Si1-xGex films, with a varying germanium fraction, were deposited using radio frequency (r.f.) sputtering and annealed under different conditions to form polycrystalline films. The structural properties of the films were examined using X-ray diffraction (XRD) and Raman spectroscopy. From the XRD and Raman spectra, the crystallinity of the films was observed to improve with an increase in annealing temperature and duration, and with increasing germanium fraction. An anomalous retardation in the crystallisation rate was attributed to the presence of impurities within the films. The impurities, together with an increased nucleating site density, caused a significant reduction in the extracted grain size. © 2001 Elsevier Science Ltd. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0038-1101(01)00241-6
dc.sourceScopus
dc.subjectPolycrystalline silicon-germanium films
dc.subjectRadio frequency sputtering
dc.subjectSilicon-germanium
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/S0038-1101(01)00241-6
dc.description.sourcetitleSolid-State Electronics
dc.description.volume45
dc.description.issue11
dc.description.page1963-1966
dc.description.codenSSELA
dc.identifier.isiut000172273900018
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