Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1413715
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dc.titleSpectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si1-x-yGexCy films
dc.contributor.authorChoi, W.K.
dc.contributor.authorFeng, W.
dc.contributor.authorBera, L.K.
dc.contributor.authorYang, C.Y.
dc.contributor.authorMi, J.
dc.date.accessioned2014-10-07T04:36:37Z
dc.date.available2014-10-07T04:36:37Z
dc.date.issued2001-12
dc.identifier.citationChoi, W.K., Feng, W., Bera, L.K., Yang, C.Y., Mi, J. (2001-12). Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si1-x-yGexCy films. Journal of Applied Physics 90 (11) : 5819-5824. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1413715
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83046
dc.description.abstractTransmission electron microscopy results showed the formation of SiC precipitation in a rapid thermally oxidized (RTO) Si1-x-yGexCy sample with high-C content. The spectroscopic ellipsometry results showed that the E1 gap increased and E2 gap decreased as the C concentration increased. For the oxidized samples, the amplitude of the E2 transitions reduced rapidly and the E1 transition shifted to a lower energy. The reduction in the E2 transitions was due to the presence of the oxide layer. A high-Ge content layer and the low-C content in the RTO films accounted for the E1 shift to lower energy. The electrical measurements showed that RTO at 800°C did not improve the oxide quality as compared to 1000°C. © 2001 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1413715
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1413715
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume90
dc.description.issue11
dc.description.page5819-5824
dc.description.codenJAPIA
dc.identifier.isiut000172129200059
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