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https://doi.org/10.1063/1.1413715
DC Field | Value | |
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dc.title | Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si1-x-yGexCy films | |
dc.contributor.author | Choi, W.K. | |
dc.contributor.author | Feng, W. | |
dc.contributor.author | Bera, L.K. | |
dc.contributor.author | Yang, C.Y. | |
dc.contributor.author | Mi, J. | |
dc.date.accessioned | 2014-10-07T04:36:37Z | |
dc.date.available | 2014-10-07T04:36:37Z | |
dc.date.issued | 2001-12 | |
dc.identifier.citation | Choi, W.K., Feng, W., Bera, L.K., Yang, C.Y., Mi, J. (2001-12). Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si1-x-yGexCy films. Journal of Applied Physics 90 (11) : 5819-5824. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1413715 | |
dc.identifier.issn | 00218979 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83046 | |
dc.description.abstract | Transmission electron microscopy results showed the formation of SiC precipitation in a rapid thermally oxidized (RTO) Si1-x-yGexCy sample with high-C content. The spectroscopic ellipsometry results showed that the E1 gap increased and E2 gap decreased as the C concentration increased. For the oxidized samples, the amplitude of the E2 transitions reduced rapidly and the E1 transition shifted to a lower energy. The reduction in the E2 transitions was due to the presence of the oxide layer. A high-Ge content layer and the low-C content in the RTO films accounted for the E1 shift to lower energy. The electrical measurements showed that RTO at 800°C did not improve the oxide quality as compared to 1000°C. © 2001 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1413715 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1063/1.1413715 | |
dc.description.sourcetitle | Journal of Applied Physics | |
dc.description.volume | 90 | |
dc.description.issue | 11 | |
dc.description.page | 5819-5824 | |
dc.description.coden | JAPIA | |
dc.identifier.isiut | 000172129200059 | |
Appears in Collections: | Staff Publications |
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