Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.920267
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dc.titleSi-nanowire based gate-all-around nonvolatile SONOS memory cell
dc.contributor.authorFu, J.
dc.contributor.authorSingh, N.
dc.contributor.authorBuddharaju, K.D.
dc.contributor.authorTeo, S.H.G.
dc.contributor.authorShen, C.
dc.contributor.authorJiang, Y.
dc.contributor.authorZhu, C.X.
dc.contributor.authorYu, M.B.
dc.contributor.authorLo, G.Q.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorKwong, D.L.
dc.contributor.authorGnani, E.
dc.contributor.authorBaccarani, G.
dc.date.accessioned2014-10-07T04:36:25Z
dc.date.available2014-10-07T04:36:25Z
dc.date.issued2008-05
dc.identifier.citationFu, J., Singh, N., Buddharaju, K.D., Teo, S.H.G., Shen, C., Jiang, Y., Zhu, C.X., Yu, M.B., Lo, G.Q., Balasubramanian, N., Kwong, D.L., Gnani, E., Baccarani, G. (2008-05). Si-nanowire based gate-all-around nonvolatile SONOS memory cell. IEEE Electron Device Letters 29 (5) : 518-521. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.920267
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83028
dc.description.abstractThis letter presents a high-speed silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory cell in gateall-around Si-nanowire (NW) architecture, which is fabricated by using a top-down process technology. The NW cell exhibits faster program and erase (P/E) speed compared to the corresponding planar device; 1 μs for programming and 1 ms for erasing at VGS = ±11 V with a threshold voltage shift "ΔVTH" of 2.6 V using the Fowler-Nordheim tunneling mechanism. At these P/E conditions, the planar device does not show appreciable change. The improvement is originated from: 1) increased electric field at the Si-SiO2 interface; 2) reduced effective tunnel barrier width; and 3) low electric field in the blocking oxide, as analyzed through simulation. In addition, good data retention makes the NW-based SONOS cell a potential candidate for future high-speed low-voltage NAND-type nonvolatile Flash memory applications. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2008.920267
dc.sourceScopus
dc.subjectGate-all-around (GAA)
dc.subjectNanowire (NW)
dc.subjectNonvolatile memory (NVM)
dc.subjectSilicon-oxide-nitride-oxide-silicon (SONOS)
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2008.920267
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume29
dc.description.issue5
dc.description.page518-521
dc.description.codenEDLED
dc.identifier.isiut000255317400031
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